*

2011 Conference Program

The conference consists of formal invited presentations sessions and poster sessions for contributed papers.

Please note: Adobe Acrobat Reader will be needed to view the abstracts for these presentations. If you do not have this program, you may download it free of charge. The software is identified in order to assist users of this information service. In no case does such identification imply recommendation or endorsement by the National Institute of Standards and Technology.

• Events (e.g., MINATEC facility tour, reception, banquet, post-conference tour)
• Invited Presentations
• Posters

 

Events

MINATEC Facility Tour

A tour of the MINATEC facility will be held on Monday, May 23^rd, from 3:00 PM to 5:00 PM. Advanced sign-up is required.

Sign-up for this event is now closed.

Reception

A welcome reception will be held at the MINATEC Campus on Monday, May 23^rd from 5:00 PM to 8:00 PM. Heavy hors d'oeuvres will be served. A registration desk will be open to receive your conference badge and final program booklet.

Banquet

A dinner banquet will be held on Wednesday, May 25^th, at "restaurant du téléphérique" at the Bastille. A tramway in front of MINATEC will depart at 6:45 PM, followed by a 10 minute walk through the "Jardin de Ville" and then cable car to the restaurant.

Poster Sessions

Dedicated poster sessions with refreshments will be held each day of the conference: 5:00 PM on Tuesday, 3:30 PM on Wednesday, and 5:30 PM on Thursday. Posters will also be available to view during lunch and coffee breaks.

Excursion to Chamonix and Mont-Blanc

The conference organizers have arranged a full-day tour to Chamonix and Mont-Blanc for Friday, May 27th. Mont-Blanc (alt. 4807 meters, 15,771 feet), is the highest mountain in Western Europe and the third most visited natural site in the world. The cost of the tour is 170 €. This price includes all transportation as well as lunch. Addtitional details are available here.

 

Invited Presentations

Tuesday, May 24

Registration

7:30 AM – 8:45 AM

Conference Opening

8:45 AM

Conference Opening

David Seiler, NIST, Conference Chair

Keynote Talks

Session Chair: David Seiler, NIST

9:00 AM

Nanocharacterization Challenges in a Changing Microelectronics Landscape
Michel Brillouet, CEA-LETI

9:45 AM

Nanoelectronics and More-than-Moore at IMEC
Rudi Cartuyvels, IMEC

10:30 AM

Coffee Break and Poster Viewing

Technology Overview for Nanoelectronics and Metrology

Session Chair: Michel Brillouet, CEA-LETI

11:00 AM

More than Moore or More Moore: a SWOT Analysis
Dan Hutcheson, VLSI Research

11:30 PM

ITRS Review in Relation to Future Metrology Needs
Alain Diebold, College of Nanoscale Science and Engineering, SUNY Albany

Metrology for Beyond CMOS

Session Chair: George Thompson, Intel

12:00 PM

Metrology and Characterization Challenges for Emerging Research Materials and Devices
Mike Garner, formerly of Intel, Dan Herr, SRC, and Yaw Obeng, NIST

12:30 PM

Lunch and Poster Viewing

2:00 PM

Carbon Based Nanoelectronics
C.Y. Sung, IBM

2:30 PM

Quantum Control and Engineering of Single Spins
David Awschalom, UCSB

Theory, Modeling, and Simulation

Session Chair: Robert McDonald, formerly of Intel

3:00 PM

Discrete Tomography in Materials Science
K. Joost Batenburg, Centrum Wiskunde & Informatica

3:30 PM

Coffee Break and Poster Viewing

4:00 PM

Materials Modeling and Metrology
Sadas Shankar, Intel

Microscopy for Nanoelectronics (part one)

Session Chair: Amal Chabli, CEA-LETI

4:30 PM

TSOM Method for Nanoelectronics Dimensional Metrology
Ravikiran Attota, NIST

5:00 PM – 6:00 PM

Poster Session (with Wine and Cheese)

Wednesday, May 25

Registration

8:00 AM – 8:30 AM

Microscopy for Nanoelectronics (part two)

Session Chair: Amal Chabli, CEA-LETI

8:30 AM

State-of-the-art TEM for the Semiconductor Industry
David Cooper, CEA-LETI

9:00 AM

SPM-Microscopy for Nanoelectronics
P. De Wolf, Veeco

9:30 AM

Atom Probe Tomography of Semiconducting Materials
Ahmed Shariq, Fraunhofer CNT, Dresden, Germany

10:00 AM

Coffee Break and Poster Viewing

10:30 AM

Scanning He Ion Beam Microscopy and Metrology
David Joy, Univ. Tenn and ORNL

Novel Characterization Methods

Session Chair: Lori Nye, Brewer Science, Inc.

11:00 AM

A Novel SPM System for Determining the Quantum Electrical Structure of Nanometer-scale Systems such as Graphene
Joseph Stroscio, NIST

11:30 AM

Metrology for 3D Devices: Plasma-based FIB for High-throughput Sectioning of Large Dimensions
Noel Smith, Oregon Physics, US

12:00 PM

Time Resolved Cathodoluminescence
Jean-Daniel Ganiere, EPFL

12:30 PM

Lunch and Poster Viewing

2:00 PM

Quantitative High-resolution Depth Profiling of Light and Heavy Elements with Low-energy High-resolution ERDA
Timo Sajavaara. University of Jyväskylä, Finland

2:30 PM

Inelastic Electron Tunneling Spectroscopy for Measuring Microscopic Bonding Structures, Impurities, and Traps
T.P. Ma, Yale

CMOS Metrology

Session Chair: Yaw Obeng, NIST

3:00 PM

Metrology at IMEC: a Center of Excellence Enabling Fundamental Understanding of Process and Materials Development
Wilfried Vandervorst, IMEC

3:30 PM

Coffee Break and Dedicated Poster Viewing Session

5:00 PM

Strain Analysis in Scaled Si Transistors by Simulation-Hybrid UV Raman Microscopy
Toshihiko Kanayama, AIST

5:30 PM

Overview of Optical Metrology of Advanced Semiconductor Materials
Vimal Kamineni, CNSE

6:00 PM

Metrology Challenges for the Ultra-thin SOI
Oleg Kononchuk, SOITEC

6:45 PM

Depart MINATEC for Banquet

Thursday, May 26

Registration

8:00 AM – 8:30 AM

Interconnect Metrology

Session Chair: Scott List, Intel

8:30 AM

Metrology for 3D IC Integration (including TSV)
Ehrenfried Zschech, Fraunhofer Institute for Non-Destructive Testing

9:00 AM

Nanomechanical Characterization and Metrology for Low-k / ULK Materials
Ude Hangen, Hysitron

9:30 PM

Stress-induced Effects Caused by 3D IC TSV Packaging on Advanced Semiconductor Processes
Valeriy Sukharev, Mentor Graphics, San Jose/CA

10:00 AM

Coffee Break and Poster Viewing

Metrology for Patterning

Session Chair: Victor Vartanian, ISMI

10:30 AM

Overview of EUV Mask Metrology
Bryan Rice, SEMATECH

11:00 AM

3D-AFM Enhancement for CD Metrology Dedicated to 28 nm Node and Below Requirements
Johann Foucher, CEA-LETI

11:30 AM

Advances in CD-Metrology (CD-SAXS, Muller Matrix based Scatterometry, and SEM)
Brad Thiel, CNSE

12:00 PM

Line Edge Roughness of Directed Self Assembled PS-PMMA Block Copolymers – A Candidate for Future Lithography
Wen-li Wu, NIST

12:30 PM

Lunch and Poster Viewing

Next-Generation Defect Inspection

Session Chair: Dick Hockett, Evans Analytical Group Ltd.

2:00 PM

Fundamental Limits of Optical Defect Metrology
Richard Silver, NIST

2:30 PM

Wafer Inspection for Sub 20 nm Patterning
Wolf Staud, Applied Materials Inc., Israel

Characterization Needs and Methods for “More than Moore”

Session Chair: Herbert Bennett, NIST

3:00 PM

Positioning More Than Moore Characterization Needs and Methods Within the 2011 ITRS
Mart Graef, Delft Univ, Netherlands

3:30 PM

Coffee Break and Poster Viewing

4:00 PM

Measurements and Standards to Characterize More than Moore Applications of Electronics: Perspectives from KIT and IEC
Norbert Fabricius, Karlsruher Institut für Technologie (KIT)

4:30 PM

Thermal Properties Characterization of Advanced Materials for Nanoelectronics
Stefan Dilhaire, CNRS-CPMOH

5:00 PM

Frontiers of More than Moore in Bioelectronics and the Required Metrology Needs
Anthony Guiseppi-Elie, Clemson

5:30 PM – 6:30 PM

Poster Session (with Wine and Cheese)

 

Posters

Tuesday, May 24^th

• TU-01, Origin Of Resistivity Change in NiO Thin Films Studied by Hard X-Ray Photoelectron Spectroscopy
  P. Calka¹, E. Martinez¹, D. Lafond¹, S. Minoret¹, C. Guedj¹, S. Tirano², B. Detlefts³, J. Roy³, and J. Zegenhagen^{3
  1}CEA-LETI, MINATEC Campus, Grenoble Cedex 9, France
  ²IM²NP, Université de Provence, Marseille, Cedex 20, France
  ³European Synchrotron Radiation Facility, Grenoble, France
• TU-02, Nanoscale Chemical Characterization by Auger Electron Spectroscopy
  E. Martinez¹, L. Borowik¹, L. You¹, N. Chevalier¹, C. Guedj¹, G. Auvert², A. Roussey¹, V. Jousseaume¹, R. Boujamaa², M. Gros-Jean², J. C. Barbé¹, G. Feuillet¹, F. Bertin¹, A. Chabli^{1
  1}CEA-LETI, MINATEC Campus, Grenoble Cedex 9, France
  ²STMicroelectronics, Crolles, France
• TU-03, Analytical Study of BAM (Al/GaAs) and Photovoltaic Samples Using State-of-The Art Auger Nanoprobes
  P. Yadav^1,2, M. Bouttemy¹, E. Martinez², A. Etcheberry¹, O. Renault², P. Mur², A. Chabli², and N. Gambacorti^{2
  1}Institut Lavoisier de Versailles, Versailles, Cedex, France
  ²CEA-LETI, MINATEC Campus, Grenoble Cedex 9, France
• TU-04, Atom Probe Tomography and Nanoelectronics
  D. Blavette, O. Mirédin-Cojocaru, T. Philippe, and S. Duguay
  Groupe de Physique des Matériaux (UMR CNRS 6634), UFR Sciences et Techniques, Rouvray, Cedex, France
• TU-05, Characterization of Strain Induced by PECVD Silicon Nitride Films in Transistor Channel
  R. Thomas¹, D. Benoit¹, L. Clement¹, P.Morin¹, D. Cooper², and F. Bertin^{2
  1}STMicroelectronics, Crolles, France
  ²CEA-LETI, Minatec Campus, Grenoble, France
• TU-06, AFM Analysis of High Temperature Dewetting under Ultra High Vacuum of Ultrathin Solid Silicon Films on Insulator
  Ł. Borowik, N. Chevalier, D. Mariolle, F. Bertin, E. Martinez, A. Chabli, and J.C. Barbé
  CEA-LETI, MINATEC Campus, Grenoble, Cedex 9, France
• TU-07, MOTIS: a Focused Ion Beam Source Based On Laser-Cooled Atoms
  B. Knuffman¹, A.V. Steele¹, J. Orloff², M. Maazouz², and J.J. McClelland^{1
  1}National Institute of Standards and Technology, Gaithersburg, MD
  ²FEI Company, Hillsboro, OR, USA
• TU-08, Surface Imaging and Spectromicroscopy of Technological Materials: Complementarities Between Electron Spectroscopies, Scanning- and Ion Probes
  O. Renault, E. Martinez, N. Chevalier, D. Mariolle, Ł. Borowik, J-C. Barbe, J. –P. Barnes, M. Veillerot, F. Bertin, and A. Chabli
  CEA-LETI, MINATEC Campus, Grenoble Cedex 9, France
• TU-09, Effects of Roughness on Scatterometry Signatures
  M. Foldyna¹, T.A. Germer², and B.C. Bergner^{3
  1}Laboratory of Interfaces and Thin Films, CNRS, Ecole Polytechnique, Palaiseau, France
  ²Optical Technology Division, National Institute of Standards and Technology, Gaithersburg, MD
  ³Spectum Scientific, Inc., Irvine, CA
• TU-10, Recent Advances in 2D-Band Structure Imaging by k-PEEM and Perspectives for Technological Materials
  C. Mathieu¹, O. Renault¹, N. Barrett², and A. Chabli^{1
  1}CEA-LETI, MINATEC Campus, Grenoble, Cedex 9, France
  ² CEA, DSM/IRAMIS/SPCSI, CEA Saclay, Cedex, France
• TU-11, Characterization of Nanodevices by STEM Tomography
  O. Richard, A. Vandooren, G. S. Kar, P. Van Marcke, and H. Bender
  IMEC, Leuven, Belgium
• TU-12, Three Dimensional Investigation for the 22-nm-Node and Beyond: Surface Morphology of Gate-all-Around Transistors by Atom Probe and Electron Tomography
  A. Grenier¹, D.Cooper¹, J.P. Barnes¹, K. Tachi¹, T.Ernst¹, S. Duguay², E. Cadel², F.Vurpillot², D. Blavette², A. Chabli¹, and F. Bertin^{1
  1}CEA, LETI, MINATEC, Grenoble, France
  ²Groupe de Physique des Matériaux, Université de Rouen, Saint Etienne du Rouvray, Cedex, France
• TU-13, Strain In Semiconductor Nanowires and Device Integration
  J. Eymery¹, V. Favre-Nicolin^1,2, F. Mastropietro^1,3, F. Rieutord¹, L. Fröberg⁴, T. Mårtensson⁴, M. Borg⁴, L. Samuelson⁴, L.-E. Wernersson⁴, S. Baudot^1,5, and F. Andrieu^{5
  1}CEA, Grenoble, France
  ²Université Joseph Fourier, Grenoble, France
  ³ESRF, Grenoble, France
  ⁴Lund University, Physics Department, Sweeden
  ⁵CEA-Leti, Minatec Campus, France
• TU-14, Physico-chemical and Electrical Characterization of Gate Stacks on GaAs and (In,Ga)As
  M. El Kazzi, D.J. Webb, L. Czornomaz, C. Rossel, C. Gerl, M. Richter, M. Sousa, P. Maechler, J. Fompeyrine, and C. Marchiori
  IBM Research – Zurich, Switzerland
• TU-15, Quantitative Strain Measurement Using Nanobeam Electron Diffraction and Dark Field Electron Holography
  A. Béché¹, C. Bougerol², B. Daudin², J.L. Rouvière², and D. Cooper^{3
  1}FEI Company, Eindhiven, The Netherlands
  ²CEA-Grenoble, INAC/SP²M, Grenoble, France
  ³CEA-Grenoble, Leti-Minatech, Grenoble, France
• TU-16, Investigation of Surface Potential on CdTe/CdS p-n Heterojunction with Kelvin Probe Force Microscopy
  L.You^1,2, N.Chevalier¹, S.Bernardi¹, E. Martinez¹, D.Mariolle¹, G.Feuillet¹, M.Kogelschatz², G.Bremond³, A.Chabli¹, and F.Bertin^{1
  1}CEA- LETI, MINATEC Campus, Grenoble, Cedex 9, France
  ²LTM-CNRS, Grenoble Cedex 9, France
  ³Université de Lyon, Institut des Nanotechnologies de Lyon (INL), Villeurbanne, Cedex, France
• TU-17, New Method of Electron Diffraction for Characterization of Nanomaterials Using the Scanning Electron Microscope
  R.H. Geiss and R.R. Keller
  National Institute of Standards and Technology, Boulder, CO
• TU-18, Status and Trends In 3D Nanodevices: Inspection by Electron Tomography
  G. Haberfehlner, A. Grenier, D. Cooper, P.-H. Morel, T. Ernst, and P. Bleuet
  CEA-LETI, MINATEC Campus, Grenoble, Cedex 9, France
• TU-19, Enhanced Spatial Resolution Electrical Scanning Probe Microscopy by Using Carbon Nanotube Terminated Tips
  J.J. Kopanski¹, I. Sitnitsky¹, V. Vartanian², P. McClure³, and V. Mancerski^{3
  1}National Institute of Standards and Technology, Gaithersburg, MD
  ²International SEMATECH Manufacturing Initiative Albany, NY
  ³Xidex Corporation Austin, TX
• TU-20, The Preparation with Argon Milling and Characterization with Cathodoluminescence of HB LED’s
  D. Erwin¹, M. Hassel Shearer¹, and D. Stowe^{2
  1}Gatan Inc., Pleasanton, CA
  ²Gatan UK, Abingdon Oxon, UK
• TU-21, X-Ray Reflectometry Parameter Uncertainties for Thin SiO₂ Films
  D. Windover¹, D.L. Gil¹, J.P. Cline¹, Y. Azuma², and T. Fujimoto^{2
  1}National Institute of Standards and Technology, Gaithersburg, MD
  ²National Institute of Advanced Industrial Science and Technology, National Metrology Institute of Japan, Tsukuba, Japan
• TU-22, C-MOS Gate Silicide Analysis by Atom Probe Tomography
  F. Panciera^1,2, K. Hoummada², M. Gregoire¹, M. Juhel¹, N. Bicais¹, and D. Mangelinck^{2
  1}STMicroelectronics, Crolles Cedex, France
  ²IM²NP, CNRS-Université Paul Cézanne, Marseille, Cedex 20, France
• TU-23, Quantitative Characterization of Buried BxCy Nanolayers by Complementary Methodologies – a Round-Robin Study
  B. Beckhoff¹, B. Pollakowski¹, R. Unterumsberger¹, S. Ladas², L. Sygellou², A. Schroeder-Heber³, A. Nutsch³, S. Gennaro⁴, D. Giubertoni⁴, and L. Vanzetti^{4
  1}Physikalisch-Technische Bundesanstalt, Berlin, Germany
  ²Surface Science Laboratory, University of Patras, Greece
  ³Fraunhofer Institute for Integrated Systems and Device Technology, Erlangen, Germany
  ⁴Fondazione Bruno Kessler, Povo, Trento, Italy
• TU-24, Atomic-Scale Modeling of Nanoelectronic Devices
  A. Blom and K. Stokbro
  QuantumWise, Copenhagen, Denmark
• TU-25, Localized Edge Vibrations and Edge Reconstruction by Joule Heating in Graphene Nanoflakes
  M. Engelund
  DTU Nanotech, Department of Micro- and Nanotechnology, Technical University of Denmark, Lyngby, Denmark
• TU-26, Atom Probe Tomography of Commercial Devices
  D.J. Larson¹, P.H. Clifton¹, D. Lawrence¹, D. Olson¹, T.J. Prosa¹, D.A. Reinhard¹, R. M. Ulfig¹, L. Renaud², J.H. Bunton¹, D. Lenz¹, and T.F. Kelly^{1
  1}Cameca Instruments Inc., Madison, WI
  ²Cameca SAS, Gennevilliers, France
• TU-27, Helium Ion Microscopy Characterization for Nano-Device Structures: SE Imaging and Ion Beam Luminescence Detection
  S. Ogawa¹, T. Iijima¹, S. Awata², S. Kakinuma², S. Komatani², and T. Kanayama^{1  
  1}National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba, Ibaraki, Japan
  ²Horiba Scientific/Semiconductor Instruments & Systems Division, Kyoto, Japan
• TU-28, Experimental Determination of Inelastic Mean Free Paths for Calculation of TEM Specimen Thickness
  E. Verleysen^1,2,3, H. Bender¹, D. Schryvers³, and W. Vandervorst^{1,2
  1}IMEC, Leuven, Belgium
  ²K.U. Leuven, IKS, Leuven, Belgium
  ³Universiteit Antwerpen, EMAT, Antwerpen, Belgium
• TU-29, Application of Scanning Transmission Electron Microscopy (STEM)-based Techniques for Development of Novel Si/SiGe on SOI FinFET Structures
  J. Nadeau¹, C. Deeb², P.Y. Hung², I. Ok², and C. Hobbs^{2
  1}FEI Company, Hillsboro, OR
  ²SEMATECH, Albany, US

 

Wednesday, May 25^th

• WE-01, Determination of SiGe Optical Properties for Accurate Ellipsometry Measurement
  F. Abbate, D. Le-Cunff, and O. Doclot
  STMicroelectronics, Crolles Cedex, France 
• WE-02, High Resolution Multiwavelength μ-Raman Spectroscopy for Nanoelectronic Material Characterization Applications
  V. Vartanian¹, T. Ueda², T. Ishigaki², K. Kang², and W. S. Yoo^{2
  1}International SEMATECH Manufacturing Initiative, Albany NY
  ²WaferMasters, Inc., San Jose, CA 
• WE-03, Current Voltage Characteristics through Grains and Grain Boundaries of HfSixOy Thin Films Measured by Tunneling Atomic Force Microscopy
  K. Murakami¹, M. Rommel¹, V. Yanev¹, A. J. Bauer¹, and L. Frey^{1,2
  1}University of Erlangen-Nuremberg, Germany
  ²Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Erlangen, Germany 
• WE-04, A New Type of Detector For Dynamic XPS Measurements
  P. Baumann, B.Krömker, G. Prümper, K.Winkler, A. Feltz
  Omicron NanoTechnology GmbH, Germany 
• WE-05, Electrical Characterization of Resistive Switching Memories
  A. Chen and M.-R. Lin
  Global Foundries, Sunnyvale, CA 
• WE-06, Ellipsometric Porosimetry: from Thin Films to Patterned Structures Characterization
  C. Licitra¹, T. Chevolleau², R. Bouyssou², M. El Kodadi², G. Haberfehlner¹, J. Hazart¹, L. Virot¹, M. Besacier², M. Darnon², R. Hurand², P. Schiavone², and F. Bertin^{1
  1}CEA-LETI, MINATEC Campus, Grenoble, France
  ²LTM, UJF-Grenoble¹/Grenoble-INP/CNRS/CEA, Grenoble, France 
• WE-07, Reliable In-line Metrology Based on the Combination of X-ray Reflectometry and Spectroscopic Ellipsometry
  E. Nolot and A. André
  CEA-Leti, Minatec Campus, Grenoble Cedex 
• WE-08, Observation of Work Function, Metallicity, Band Bending, Dipole by EUPS for Characterizing High-k/Metal Interface
  T. Tomie
  National Institute of Advanced Industrial Science and Technology (AIST), Umezono, Tsukuba, Ibaraki, Japan 
• WE-09, High-k Thin Film Thickness Variation Under Post-Deposition Annealing Investigated by X-ray Reflectivity and X-ray Photoelectron Spectroscopy
  Y.-Q. Chang and W.-E. Fu
  Center for Measurement Standards, Industrial Technology Research Institute (ITRI), Hsinchu, Taiwan 
• WE-10, Wafer Bonding Interface X-Ray Characterization
  F. Rieutord¹, L. di Cioccio², and H. Moriceau^{2
  1}CEA-INAC, Grenoble, France
  ²CEA-LETI-Minatec, DIHS/LTFC, Grenoble, France 
• WE-11, Laue MicroDiffraction on French Beamline BM32 at ESRF
  J.-S. Micha¹, X. Biquard², P. Bleuet³, O. Geaymond⁴, P. Gergaud³, F. Rieutord¹, O. Robach¹, and O. Ulrich^{1
  1}CEA-Grenoble, Grenoble, France
  ² CEA-Grenoble/ INAC/ SP2M, Grenoble, France
  ³ CEA-Grenoble/ LETI-MINATEC, Grenoble, France
  ⁴ CNRS-Institut Néel, Grenoble, France 
• WE-12, Fluorescence Yield XAFS Spectrometer for Light Elements (B, C, N, O) in Semiconductor Materials
  M. Ohkubo¹, S. Shiki¹, M. Ukibe¹, and Y. Kitajima^{2
  1}National Institute of Advanced Industrial Science and Technology (AIST), Umezono, Tsukuba, Ibaraki, Japan
  ²High Energy Accelerator Research Organization (KEK), Institute of Materials Structure Science (IMSS), Oho, Tsukuba, Ibaraki, Japan 
• WE-13, The Reduction of Substitutional C in Annealed Si/SiGeC Superlattices Studied by Dark-Field Electron Holography
  T. Denneulin¹, J.-L. Rouvière², A. Béché³, M. Py¹, J.-P. Barnes¹, J.-M. Hartmann¹, and D. Cooper^{1
  1}CEA-LETI, Minatec Campus, Grenoble, Cedex 9, France
  ²CEA-INAC, Minatec Campus, Grenoble Cedex 9, France
  ³FEI Company, G Eindhoven, The Netherlands 
• WE-14, Atomic Layer Deposited Al₂0₃ as Characterized Reference Samples for Nanolayer Metrology
  A. Nutsch, M. Lemberger, and P. Petrik
  Fraunhofer Institute for Integrated Systems and Device Technology, Erlangen, Germany 
• WE-15, A Novel X-ray Diffraction and Reflectivity Tool for Front-End of Line Metrology
  M. Wormington¹, B. Yokhin², D. Berman², A. Krokhmal², I. Mazor², P. Ryan³, J. Wall³, and R. Bytheway^{3
  1}Jordan Valley Semiconductors Inc., Austin, TX
  ²Jordan Valley Semiconductors Ltd., Ramat Gavriel, Migdal Ha'Emek, Israel
  ³Jordan Valley Semiconductors Ltd., Belmont, Durham, UK 
• WE-16, Comparison Between Spectroscopic Ellipsometry and HRTEM-VEELS Analyses of HfO₂-based Stacks
  C. Guedj¹, C. Licitra¹, G. Auvert², G. Audoit¹, D. Lafond¹, E. Martinez¹, F. de la Peña¹, P. Bayle-Guillemaud³, N. Gambacorti¹, A. Chabli¹, and F. Bertin^{1
  1}CEA-LETI, MINATEC Campus, Grenoble, Cedex 9, France
  ²STMicroelectronics, Crolles, France
  ³CEA, INAC, Grenoble, France 
• WE-17, Development of a High Brilliance X-ray Source for Advanced Thin Film Characterization
  I. Kieffer¹, P. Gergaud¹, P. Dova², P. Panine², and S. Rodrigues^{2
  1}CEA - LETI, MINATEC Campus, Grenoble, Cedex 9, France
  ²Xenocs SA, Sassenage, France 
• WE-18, Synchrotron Radiation X-Ray Photoelectron Spectroscopy Applied to Advanced High-k Metal Gate Stacks
  R. Boujamaa^1,2,3, O. Renault², E. Martinez², B. Detlefs⁴, J. Zegenhagen⁴, M. El Kazzi⁵, F. Sirotti⁵, S. Baudot¹, M. Gros-Jean¹, F. Bertin², and C. Dubourdieu^{3
  1}STMicroelectronics, Crolles, France
  ²CEA-Leti, MINATEC Campus, Grenoble, Cedex 9, France
  ³LMGP, CNRS, Grenoble, France
  ⁴European Synchrotron Radiation Facility, Grenoble, France
  ⁵Synchroctron SOLEIL, Gif-sur-Yvette, France 
• WE-19, A High Depth Resolution MEIS Analysis of Ultra Thin STO/TiN Layers on Si for DRAM MIM Capacitors
  J.A. van den Berg¹, M.A. Reading¹, P.C. Zalm¹, P. Bailey², T.C.Q. Noakes², C. Adelmann³, and H. Tielens^{3
  1}University of Salford, Salford, UK
  ²STFC Daresbury Laboratory, Daresbury, UK
  ³IMEC, Leuven, Belgium 
• WE-20, Multi-technique Approach for the Evaluation of the Crystal Phase of Ultrathin High-k Gate Oxide Films
  E. Bersch¹, J. LaRose¹, I. Wells¹, S. Consiglio², R.D. Clark², G.J. Leusink², R.J. Matyi¹, and A.C. Diebold^{1
  1}College of Nanoscale Science and Engineering, University at Albany, Albany, NY
  ²TEL Technology Center, America, LLC, Albany, NY 
• WE-21, High Frequency Acoustics for Probing at Nanometer Scale in SOI-based Stacks
  J. Groenen¹, S. Schamm-Chardon¹, L. Lamagna², L. Yaacoub¹, M. Fondevilla¹, A. Zwick¹, and M. Fanciulli^{2,3
  1}CNRS,CEMES,Université de Toulouse, Toulouse, France
  ²Laboratorio Nazionale MDM, CNR-INFM, Agrate, Brianza (MI), Italy
  ³Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca, Milano, Italy 
• WE-22, SiC Resistivity Monitoring: a look at Novel Methods
  E. Tsidilkovski and R.J. Hillard
  Semilab USA, Billerica, MA 
• WE-23, A Method for USJ Process Control
  E. Tsidilkovski
  Semilab USA, Billerica MA 
• WE-24, Soft X-Ray Induced Characterization of Ultra Shallow Junction Depth Profiles and Activation
  P. Hoenicke¹, B. Beckhoff¹, D. Giubertoni², E. Demenev², E. Hourdakis³, A.G. Nassiopoulou³, and Y. Kayser^{4        
  1}Physikalisch-Technische Bundesanstalt, Berlin, Germany
  ²Fondazione Bruno Kessler, Povo, Trento, Italy
  ³Nat. Center for Sci. Res. Demokritos, Inst. of Microelectron., Athens, Greece
  ⁴Department of Physics, University of Fribourg, Fribourg, Switzerland 
• WE-25, Single-Wavelength Photoreflectance Characterization of Strain Relaxation in Silicon on Silicon-Germanium
  W. Chism¹, V. Vartanian², and M. Current^{3
  1}Xitronix Corporation, Austin TX
  ²International SEMATECH Manufacturing Initiative, Albany NY
  ³Current Scientific, San Jose, CA 
• WE-26, Advanced SIMS Quantification in the First Few nm of B, P and As Ultra Shallow Implants
  A. Merkulov, J. Choi, P. Peres, F Horreard, and M. Schuhmacher
  CAMECA SAS, Gennevilliers, Cedex, France 
• WE-27, The Use of LEXES to Measure the Chemical Composition of In-situ Doped Epitaxial SiGe for High Performance CMOS Technology
  M. P. Moret, , H François-Saint-Cyr, C. Hombourger, N. Morel, and M. Schuhmache
  CAMECA SAS, Gennevilliers, Cedex, France 
• WE-28, Advanced Use of Therma-Probe for Ultra-Shallow Junction Monitoring
  J. Bogdanowicz^1,2, T. Clarysse¹, S. Gerrit¹, E. Rosseel¹, and W. Vandervorst^{1,2
  1}IMEC, Heverlee, Belgium
  ²Instituut voor Kern- en Stralingsfysika, KU Leuven, Leuven, Belgium 
• WE-29, A Multi Techniques Approach to Characterize Ultra Shallow Junctions for sub 45 nm CMOS Devices
  C. Grosjean¹, B. Bortolotti¹, R. Daineche², Y. de Puydt³, Y. Spiegel⁴, F. Torregrosa⁴, H. Etienne^{4
  1}ST Microelectronics, Rousset, Cedex, France
  ²IM2NP, Marseille Cedex 20, France
  ³Biophy Research, Fuveau, France
  ⁴ION BEAM SERVICES, Peynier, France 
• WE-30, Advanced Metrologies for Topography and Thickness Measurements
  G. Riou¹, P. Acosta¹, M. Darwin², and B. Kamenev^{2
  1}SOITEC, Bernin, France
  ²Nanometrics, Hillsboro, OR 

 

Thursday, May 26^th

• TH-01, Ultimate Backside Sample Preparation for Ultra Thin High-k/Metal Gate Stack Characterization
  M. Py¹, M. Veillerot¹, E. Martinez¹, J.M. Fabbri¹, R. Boujamaa^{1, 2}, and J.P. Barnes^{1
  1}CEA-Leti, MINATEC Campus, Grenoble, Cedex 9, France
  ²STMicroelectronics, Crolles, France 
• TH-02, Elemental Depth Profiling of Ultra Thin High-k Material Stacks by Full Spectrum ToF-SIMS and LEIS
  M. Py¹, R. Boujamaa^1,2, J.P. Barnes¹, M. Gros-Jean², T. Grehl³, P. Brüner³ and N. Gambacorti^{1
  1}CEA-Leti, MINATEC Campus, Grenoble, Cedex 9, France
  ²STMicroelectronics, Crolles, France
  ³ION-TOF GmbH, Münster, Germany 
• TH-03, Establishing SI Traceability for Scatterometry
  T.A. Germer
  National Institute of Standards and Technology, Gaithersburg, Maryland
• TH-04, Evaluation of Metal Etches on Unpatterned Wafers Using Surface Haze Measurements
  B. Donehoo and S. Biswas
  Portland Technology Development, Intel Corp., Hillsboro, OR 
• TH-05, Microwave Characterization of Transparent Conducting Films
  J. Obrzut and O. Kirillov
  National Institute of Standards and Technology, Gaithersburg, MD 
• TH-06, The Impact of Organic Contamination on the Oxide-Silicon Interface
  D. Codegoni¹, M.L. Polignano¹, L. Castellano¹, G. Borionetti², F. Bonoli², A. Nutsch³, A. Leibold³, and M. Otto^{3
  1}Numonyx, Agrate Brianza (MB), Italy
  ²MEMC Electronic Materials SpA, Novara, Italy
  ³Fraunhofer IISB, Erlangen, Germany 
• TH-07, Reliability Testing of Advanced Interconnect Materials
  R.R. Keller¹, M.C. Strus¹, A.C. Debay¹, D.T. Read², Y.L. Kim², and Y.J. Jung^{3
  1}National Institute of Standards and Technology, Boulder, CO
  ²Northeastern University, Electrical and Computer Engineering, Boston, MA
  ³Northeastern University, Mechanical and Industrial Engineering, Boston, MA 
• TH-08, Measurement of Nanograin Orientations: Application to Cu Interconnects and Nanoparticle Phase Identification
  G. Brunetti¹, J.L. Rouvière², R. Galand³, L. Clément³, C. Cayron⁴, E.F. Rauch⁵, D. Robert⁴, J.F. Martin⁴, F. Bertin¹, A. Chabli^{1
  1}CEA-LETI, Minatec Campus, Grenoble, France
  ²CEA-Grenoble, Grenoble, France
  ³STMicroelectronics, Crolles, France
  ⁴CEA, DRT, LITEN, Grenoble, France
  ⁵Université de Grenoble, Lab., Cedex, France 
• TH-09, Characterization and Failure Analysis of 3D Integrated Systems Using a Novel Plasma-FIB System
  L. Kwakman¹, G. Franz¹, A. Klumpp², and P. Ramm^{2
  1}FEI Electron Optics, The Netherlands
  ²Fraunhofer EMFT, Munich, Germany 
• TH-10, FIB/SEM Structural Analysis of Through-Silicon-Vias
  H. Bender, C. Drijbooms, and A. Radisic
  IMEC, Leuven, Belgium 
• TH-11, Analysis of the Noble Metals on Silicon Wafers by Chemical Collection and ICPMS
  H. Fontaine¹, D. Hureau¹, M. Groz¹, D. Despois², and C. Louis^{1
  1}CEA-Leti, MINATEC Campus, Grenoble, Cedex 9, France
  ²ST Microelectronics, Crolles Cedex, France 
• TH-12, Mechanism of Haze Formation on 193 nm Photolithographic Reticules: SO₂ Contamination on Cr
  M. Veillerot, H. Fontaine, J.P. Barnes, G. Demenet, F. Piallat, S. Cetre, and E. Martinez
  CEA-Leti, MINATEC Campus, Grenoble, Cedex 9, France 
• TH-13, Advanced Monitoring of Trace Metals Applied to Contamination Reduction of Silicon Device Processing
  P. Maillot and C. Martin
  STMicroelectronics, Rousset, Cedex, France 
• TH-14, Micro Roughness Determination of Periodic Microelectronics Structures Using Optical Far Field Measurements
  P. Maillot¹, A. Vauselle¹, G. Georges², and C. Deumié^{2
  1}STMicroelectronics, Rousset, Cedex, France
  ²Institut Fresnel, CNRS, Aix-Marseille Université, Marseille, France 
• TH-15, Joint Research on Scatterometry and AFM Wafer Metrology
  B. Bodermann¹, E. Buhr¹, P. Klapetek², P.-E. Hansen³, V. Korpelainen⁴, F. Scholze¹, M. van Veghel⁵, and A. Yacoot^{6
  1}Physikalisch-Technische Bundesanstalt, Braunschweig
  ²Cesky Metrologicky Institut Brno, Brno
  ³Dansk Fundamental Metrolog, Matematiktorvet, Kongens Lyngby
  ⁴Mittatekniikan Keskus, Espoo
  ⁵VSL B.V., JA Delft
  ⁶NPL Management Limited, Teddington, Middlesex 
• TH-16, Possible Methods for Measuring the Impact of Bubbles in Temporary Bonding Materials for 3D Integration
  S. Bernard¹, R.A. Miller², V. Pepper³, J. Braggin⁴, and F.F.C. Duval^{2
  1}Entegris, GmbH., Dresden, Germany
  ²Imec, Kapeldreef 75, Leuven, Belgium
  ³Nanda Technologies GmbH, Unterschleissheim, Germany
  ⁴Entegris, Inc., Billerica, MA 
• TH-17, Studies of Impurity Redistribution in Copper Ultrafine Lines in BEOL Structures
  H. Parvaneh¹, S. Novak², K. Dunn², M. Rizzolo², and E. Lifshin^{2
  1}Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy NY
  ²College of Nanoscale Science and Engineering, University at Albany, Albany, NY 
• TH-18, ToF-SIMS Analysis of the Effect of Bath Modulation on Impurity Incorporation into Damascene Copper
  M. Rizzolo, H. Parvaneh, S. Novak, E. Lifshin, and K. A. Dunn
  College of Nanoscale Science and Engineering, University at Albany, Albany, NY 
• TH-19, Multi-scale Resolution 3D X-ray Imaging for 3D IC Process Development and Failure Analysis
  W. Yun, M. Feser, J. Gelb, and L. Hunter
  Xradia, Inc., Concord, CA 
• TH-20, Void Detection In Copper Interconnects Using Energy Dispersive X-Ray Spectroscopy
  M. Tsigkourakos^1,2, T. Hantschel¹, A. Franquet¹, T. Conard¹, L. Carbonell¹, and W. Vandervorst^{1,2
  1}IMEC, 3001 Leuven, Belgium
  ²K.U. Leuven, Department of Physics and Astronomy, Leuven, Belgium 
• TH-21, Fourier Scatterometry for Characterization of Sub-wavelength Periodic Two Photon Polymerization Structures
  K. Frenner¹, V. Ferreras Paz¹, S. Peterhänsel¹, W. Osten¹, A. Ovsianikov², K. Obata², and B. Chichkov^{2
  1}Institute of Applied Optics, Stuttgart University, Stuttgart, Germany
  ²Nanotechnology Department, Laser Zentrum Hannover e.V., Hannover, Germany
• TH-22, Robust, High Aspect Ratio Columnar Diamond Atomic Force Microscope Probes for High Relief Imaging
  Sarvesh K. Tripathi¹, Neal O'Hara¹, Giovanni Fois¹, Declan Scanlan² and Graham L. W. Cross^{1,2
  1}CRANN Nanoscience Institute, School of Physics, Trinity College, Dublin 2, Ireland
  ²Adama Innovations, Galway, Ireland
• TH-23, Thin Film Mechanical Characterization Using Colored Picosecond Acoustics
  P. Emery and A. Devos
  MENAPiC, Lille, Cedex, France