EUV Photoresist, Application of CD-SAXS, High-K Materials, Mask Metrology, Reliability of Interconnect.
Since 2005, Kwang-Woo Choi has worked with the NIST Polymers Division-Electronics Materials Group under an Intel-NIST CRADA to perform research in understanding line-width roughness (LWR) origins for extreme ultraviolet (EUV) photoresist and development/assessment of the CD-SAXS metrology. He also serves to facilitate and guide the knowledge transfer of the research performed at NIST to meet Intel's advanced technology needs.
Prior to his current position as an Intel assignee to NIST, Kwang-Woo Choi worked in Intel's California Technology Manufacturing, as a manager of the Fab Product Engineering group responsible for the overall management/coordination between the fab, assembly/test, and the division/design groups.
Visiting Industrial Scientist, Intel
Electronics Materials Group
2005-Present Visiting Industrial Scientist (Intel)