Figures 1(left): Stress profiles measured across 350 mN wedge indentation in Si using EBSD and Confocal Raman Microscopy with different wavelength laser excitation; Figure 2(right): Lattice comparator with two x-ray sources, interferometer-controlled crystal and four test crystals
Strain engineering at the nanoscale in the microelectronics industry requires the ability to make strain and stress measurements with spatial resolution at the 50 nm level and strain resolution at the 10-4 level. Electron Back Scattered Diffraction and Confocal Raman Spectroscopy are two complementary techniques that can achieve the necessary resolutions. Significant progress has been made with both techniques but much work in technique and standards development remains to be done.
Study uniaxial and triaxial texture with diffraction techniques. Use electron backscatter diffraction and x-ray diffraction with area and linear detectors to investigate texture in thin films (typically uniaxial) and bulk materials at different length scales.
Structure Determination Methods Group
1988–present: Physicist, Ceramics Division, NIST
Ph.D., Physics, Bristol University, UK, 1979