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Key metrologies/systems: Superresolving optical microscopy/Coherent anti-Stokes Raman scattering; Scanning Kelvin probe microscopy/Organic thin film transistors; Focused-ion beam/ZnO nanowires and release-formed nanochannels. Advanced platforms and protocols are being developed towards innovative nanoscale metrology using sub-diffraction laser-based chemical imaging via superresolution non-linear spectroscopy, charge/potential-based scanned probe microscopies, and nanowire-based scalable fabrication of complex nanofluidic devices.


Superresolving optical microscopy/Coherent anti-Stokes Raman scattering:
Light microscopy is a widely used analytical tool because it provides non-destructive, real-time, three-dimensional imaging with chemical and material specific contrast. Despite microscopy advances in detection, identification, and manipulation, today’s demands on chemical imaging have grown beyond current capabilities. The principal focus of this project is to establish the scientific and metrology underpinnings necessary for the realization and operation of superresolution light microscopy in real world applications. We have designed and fabricated a flexible superresolution optical microscopy platform that combined with vector point spread function engineering, represents the state-of-the-art in optical diagnostics for in-situ characterization of organic and biological materials.
Link to additional details.

Scanning Kelvin probe microscopy/Organic thin film transistors:

Scanning Kelvin probe microscopy (SKPM) of functioning solution processed thin film transistors is used to correlate film microstructure with device performance. As the channel length increases in these spun-cast devices, significant changes occur in the film microstructure within the device channel. These changes are observed with SKPM and show a strong structure-function relationship.
Link to additional details.

Focused-ion beam/ZnO nanowires and release-formed nanochannels:
Controlling the location and orientation of nanobuilding blocks in assemblies of nanodevices is a challenging task in “bottom-up” chemical approaches for nanodevice fabrication. Here, a strategy is described for in-situ fabrication of horizontal nanochannels that allows control over orientation and average pore size at an unprecedented range of ≈5 nm to ≈20 nm. Using this approach, nanochannels with controlled average pore sizes are fabricated at known positions on a surface. Equally important, the nanochannels are addressable photolithographically and integrable to microchannels without the use of any high resolution lithography. This technique uses horizontal ZnO nanowires as a sacrificial template and affords the capability of fabrication of complex micro- and nanofluidic platforms. Cross-sections of nanowires and nanochannels are prepared via a focused-ion beam and examined by electron microscopy and energy-dispersive X-ray spectroscopy.
Link to additional details. 

Associated Publications:

"The Effects of Inhomogeneous Fields in Superresolving Structured-Illumination Microscopy," M. Beversluis, G. Bryant, and S. Stranick, J. Opt. Soc. Amer. A 25, 1371 (2008).

"Enhanced Contrast Coherent Anti-Stokes Raman Scattering Microscopy using Annular Phase Masks", M. Beversluis, and S. Stranick, Appl. Phys. Lett., in press.

“Surface Potential Imaging of Solution Processable Acene-Based Thin Film Transistors” L. C. Teague, B. H. Hamadani, O. A. Jurchescu, S. Subramanian, J. E. Anthony, T. N. Jackson, C. A. Richter, D. J. Gundlach, and J. G. Kushmerick, Advanced Materials (2008) in press.

"A Scalable Platform for Integrating Horizontal Nanochannels with Known Registries to Microchannels", B. Nikoobakht, Chemistry of Materials, in press.


Lead Organizational Unit:


Stephan Stranick
Email: stephan.stranick@nist.gov
Tel: 301-975-2348

James Kushmerick
Email: james.kushmerick@nist.gov
Tel: 301-975-5697

Babak Nikoobakht
Email: babakn@nist.gov
Tel: 301-975-3230