Bookmark and Share

Highlights from the Manufacturing
Engineering Laboratory, June 2009

Return to Highlights page

Impact of NIST Research and Services

MEL Precision Random Profile Roughness Specimens Support US Industry in Precision Surface Measurement

Measurement and quality control of precision engineering surfaces play an increasingly important role in modern science and technology, not only because of their important engineering functions but also of their high production costs.  Significant differences happen in precision surface measurements when the same surface is measured by different instruments or at different conditions.  Random profile roughness specimens, or Type D specimens, are specified for use as check standards for precision surface measurements in the ASME B46 (Surface Quality) and ISO 5436 (Geometrical Product Specifications (GPS) -- Surface texture: Profile method; Measurement standards) standards.

In 2004, the MEL’s Surface and Microform Metrology Group developed a set of 24 Type D specimens with arithmetic average roughness (PRa) values ranging from 0.014 µm to 0.13 µm.  These specimens are used by U.S. companies for precision surface measurements and have significantly improved their measurement quality control.  These companies include GE Aviation, Cummins Engine, Insitu Tec. Inc., Timken Company, and REM Chemicals Inc.  A Design Engineer of GE Aviation recently sent an email to NIST and said that: “In September 2005 GE Aviation received 4 NIST surface finish calibration specimens.  The NIST specimens were used to perform a gauge R&R (Repeatability and Reproducibility) study between different locations of GE Aviation in Cincinnati, OH, Wilmington, NC and Hooksett, NH using stylus and optical surface finish measurement devices.  Using the surface finish calibration specimens provided by NIST gave GE engineering confidence that we could measure surface finishes down in the single digit micro-inch PRa range (0.025 µm), and also allowed us to verify that we could measure the surface finish on the same part at 3 different locations and report the same result at all locations.  The NIST specimens allowed GE engineering to expand our measurement capabilities and eliminate gauge R&R issues between various manufacturing shops, and I would like to say thanks to NIST for providing these specimens as they were invaluable for helping us to clear up surface finish measurement issues we were having at the time.”

The NIST precision random profile roughness specimens are electro-formed replicas from master specimens produced by MEL researcher John Song in 1985.  A NIST standard reference material (SRM) project is planned to produce these master specimens as a NIST SRM roughness standard to support US industry.

Contact: John Song 301 975 3799

Programmatic/Technical Accomplishments

Forensics Short Course Presented

MEL Division Chief Michael Postek participated in the “Scanning Microscopy in Forensic Science” Short Course at the SPIE Scanning Microscopy 2009 (formerly known as SCANNING) meeting in Monterey, California. Dr. Frank Platek of the Forensic Chemistry Center, US Food and Drug Administration organized the course. This short course was devoted to scanning electron microscopy analysis of many types of forensic samples. Specific topics covered include particulate trace evidence analysis, gunshot residue (GSR) analysis, and instrument calibration concerns and procedures. With the increased efforts of most forensic laboratories moving toward certification and accreditation (ISO, ASCLD, etc.), a section of this short course was devoted to SEM calibration issues and the many pitfalls of blindly trusting instrument readings. Dr. Platek invited Michael Postek to discuss Scanning Electron Microscopy (SEM) calibration issues for the forensic scientists. Participants from the U.S. and several foreign countries attended the course.

Contact:  Michael Postek, 301 975 2299

Interactions

First SPIE/ SCANNING Meeting Held  

The first international conference SPIE Scanning Microscopy 2009, which gathered experts from all branches of scanning microscopy, was held in Monterey California in May 2009.  This conference evolved from the Foundation for Advances in Medicine and Science Inc. (FAMS) sponsored Scanning Meeting which ended in 2007.  NIST hosted a “bridge” meeting in 2008. Michael Postek (Chief of the Precision Engineering Division of MEL), Dale Newbury (CSTL Fellow), and Frank Platek (Scientist, US FDA Forensic Chemistry Center) served as technical organizers and organizers for the over 100 scientists and engineers from the U.S., Canada, Australia, Belgium, France, Germany, Netherlands, Russia, Uganda, South Korea, China, and Japan.  Several other NIST researchers participated either by being session chairs or by giving presentations. Topics included scanning electron microscopy, x-ray microanalysis, scanning ion microscopy, optical microscopy, specimen preparation, scanned probe microscopy, dimensional metrology at nanoscale dimensions, particle characterization studies, modeling of radiation interaction with matter in support of image interpretation, microscopy standards, and applications in forensic analysis.

Of particular interest were the sessions on helium ion microscopy, a rapidly emerging new technique with the potential for extending nanometrology beyond the limits currently being encountered with the classic scanning electron microscope. These dimensional measurements are critical to the production of advanced semiconductor electronics. NIST received the first production model of a helium ion microscope, which is currently being evaluated by MEL for metrological applications, CSTL staff for analytical capabilities and MSEL for materials applications.

Contact:  Michael Postek, 301 975 2299

Nanomanufacturing Summit Organized by NIST

The Nanomanufacturing Summit 2009 held in Boston, MA showcased high-quality technical contributions by experts and practitioners in the field of nanomanufacturing, as well as provided a networking event for the broader nanomanufacturing (NM) community. A primary objective was to highlight those areas of practice that stand out from the general nanotechnology and nanoscience themes as being near-term and having the potential to facilitate the commercial development and/or marketable application of nanoscale systems and devices. MEL’s Michael Postek presented an invited paper on the need for instrumentation, metrology and accurate standards for nanomanufacturing entitled: “Measurements, Instrumentation and Standards for Nanotechnology.” MEL was an organizer and sponsor of the Nanomanufacturing Summit.

Contact:  Michael Postek, 301 975 2299

Recognition

MEL Staff Receive Best Presentation Award

MEL researchers Guodong Shao, Swee Leong and Charles McLean were presented with a “Best Presentation Award” in commendation for their outstanding paper: Simulation-based Manufacturing Interoperability Standards and Testing.  The presentation was made at the 9th International Conference on Progress of Machining Technology held in China, April 25-28, 2009.  This conference has been held every two years since 1992.  It brings together researchers in the field of machining technology from all around the world. A copy of the paper can be found at: http://www.mel.nist.gov/publications/get_pdf.cgi?pub_id=901344

Contact: Tina Lee, 301 975 3550

Invited Paper on Helium Ion Microscopy

MEL researcher Michael T. Postek was invited to present an update on the NIST progress in helium ion microscopy at the 2009 International Conference: Frontiers of Characterization and Metrology for Nanoelectronics held at the College of Nanoscale Science and Engineering at the University of Albany. This conference, the seventh in the series, focused on the frontiers and innovation in characterization and metrology of nanoelectronics. The helium ion microscopy is just beginning to show promise in imaging and metrology for nanotechnology and the plethora of potentially advantageous applications for nanotechnology and nanometrology have yet to be exploited. Michael’s presentation titled “Understanding the Imaging and Metrology Using the Helium Ion Microscope” discussed some of the progress made in understanding the imaging and metrology for semiconductor research using this new instrumentation.

Contact:  Michael Postek, 301 975 2299