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Publication Citation: Scanning Capacitance Microscopy Measurements and Modeling: Progress Towards Dopant Profiling of Silicon

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Author(s): Joseph J. Kopanski; Jay F. Marchiando; J R. Lowney;
Title: Scanning Capacitance Microscopy Measurements and Modeling: Progress Towards Dopant Profiling of Silicon
Published: December 31, 1995
Abstract:
Proceedings: Proc., International Workshop on the Measurement and Characterization of Ultrashallow Doping Profiles in Semiconductors
Pages: pp. 9.1 - 9.8
Location: Research Triangle Park, NC
Dates: March 20-22, 1995
Research Areas: