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|Author(s):||Bryan M. Barnes; Francois R. Goasmat; Martin Y. Sohn; Hui Zhou; Richard M. Silver; Andras Vladar; Abraham Arceo;|
|Title:||Optical volumetric inspection of sub-20 nm patterned defects with wafer noise|
|Published:||April 02, 2014|
|Abstract:||We have previously introduced a new data analysis method that more thoroughly utilizes scattered optical intensity data collected during defect inspection using bright-field microscopy. This volumetric approach allows conversion of focus resolved 2-D collected images into 3-D volumes of intensity information and also permits the use of multi-dimensional processing and thresholding techniques to enhance defect detectability. In this paper, the effects of wafer noise upon detectability using volumetric processing are assessed with both simulations and experiments using the SEMATECH 9 nm node intentional defect array. The potential extensibility and industrial application of this technique are evaluated.|
|Conference:||Metrology, Inspection, and Process Control for Microlithography|
|Proceedings:||Proceedings of the SPIE|
|Location:||San Jose, CA|
|Dates:||February 23-27, 2014|
|Keywords:||wafer noise, defect inspection, volumetric processing, defect metrology, three-dimensional image processing|
|Research Areas:||Metrology and Standards for Manufacturing Processes, Inspection, Optical microscopy, Nanofabrication, Nanomanufacturing, and Nanoprocessing, Imaging|
|DOI:||http://dx.doi.org/10.1117/12.2048231 (Note: May link to a non-U.S. Government webpage)|
|PDF version:||Click here to retrieve PDF version of paper (2MB)|