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Publication Citation: Raman spectroscopy-enhanced IIT: In situ analysis of mechanically stressed polycrystalline Si thin films

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Author(s): Yvonne B. Gerbig; Chris A. Michaels; Robert F. Cook;
Title: Raman spectroscopy-enhanced IIT: In situ analysis of mechanically stressed polycrystalline Si thin films
Published: July 08, 2014
Abstract: Exposed to mechanical stress, semiconductor materials may phase transform, resulting in changes of crystallographic structure and material properties, rather than deform by plastic flow. As a consequence, prediction of the state and distribution of strain in semiconductors has become crucial for the evaluation of performance and reliability of structures made of these materials. Indentation-induced phase transformation processes were studied by in situ Raman imaging of the deformed contact region of silicon, employing a Raman spectroscopy-enhanced instrumented indentation technique (IIT). This is, to our knowledge, the first sequence of Raman images documenting the evolution of the strain fields and combined changes in the phase distributions of a material under contact load.
Proceedings: SEM 2014 Annual Conference & Exposition on Experimental and Applied Mechanics
Volume: 6
Pages: pp. 195 - 201
Location: Greenville, SC
Dates: June 2-5, 2014
Keywords: Indentation; in situ; Raman imaging; phase transformation; silicon
Research Areas: Semiconductor Materials
DOI: http://dx.doi.org/10.1007/978-3-319-06989-0_26  (Note: May link to a non-U.S. Government webpage)
PDF version: PDF Document Click here to retrieve PDF version of paper (600KB)