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NIST Authors in Bold
|Author(s):||Wei Li; Christina A. Hacker; Guangjun Cheng; Angela R. Hight Walker; Curt A. Richter; David J. Gundlach; Yiran Liang; boyuan Tian; Xuelei Liang; Lianmao Peng;|
|Title:||Highly reproducible and reliable metal/graphene contact by UV-Ozone treatment|
|Published:||March 17, 2014|
|Abstract:||Resist residue from the device fabrication process is a significant source of contamination at the metal/graphene contact interface. Ultraviolet Ozone (UVO) treatment is proven here, by X-ray photoelectron spectroscopy (XPS) and Raman measurement, to be an effective way of cleaning the metal/graphene interface. Electrical measurements of devices which were fabricated by using UVO treatment of the metal/graphene contact region show that stable and reproducible low resistance metal/graphene contacts are obtained and the electrical properties of the graphene channel remain unaffected.|
|Citation:||Journal of Applied Physics|
|Keywords:||graphene, metal/graphene contact, residue|
|Research Areas:||Nanoelectronics and Nanoscale Electronics|