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Publication Citation: Estimates of photoluminescence efficiencies in GaN nanowires at high injection levels from steady- state photoluminescence measurements

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Author(s): John B. Schlager; Matthew D. Brubaker; Kristine A. Bertness; Norman A. Sanford;
Title: Estimates of photoluminescence efficiencies in GaN nanowires at high injection levels from steady- state photoluminescence measurements
Published: March 10, 2014
Abstract: Photoluminescence (PL) efficiencies were estimated for individual silicon-doped GaN nanowires grown by plasma assisted molecular beam epitaxy (PAMBE). Steady-state PL measurements reveal efficiencies that depend on excitation intensity, temperature, and nanowire morphology. While many nanowires had their best efficiencies at base temperature (T ∼ 4 K), some nanowires, given sufficient excitation intensities, had best efficiencies at elevated temperatures (T ∼ 100 K). Room-temperature internal quantum efficiency (IQE) of PL was as high as 33 {plus or minus} 5%. These steady-state results corroborate with time-resolved PL measurements reported earlier, and both methods can aid in optimizing the growth and processing of nanowires for future applications in nanoscale optoelectronics.
Citation: Physica Status Solidi
Volume: 11
Issue: 3-4
Pages: pp. 810 - 812
Keywords: gallium nitride, internal quantum efficiency, molecular beam epitaxy, nanowire, photoluminescence
Research Areas: UV Optical Metrology, Semiconductor Materials
DOI: http://dx.doi.org/10.1002/pssc.201300535  (Note: May link to a non-U.S. Government webpage)
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