NIST logo

Publication Citation: Epitaxial Si encapsulation of highly misfitting SiC quantum dot arrays formed on Si (001)

NIST Authors in Bold

Author(s): Christopher W. Petz; Dongyue Yang; Alline F. Myers; Jeremey Levy; Jerrold Floro;
Title: Epitaxial Si encapsulation of highly misfitting SiC quantum dot arrays formed on Si (001)
Published: January 08, 2014
Abstract: This work examines Si overgrowth to encapsulate 3C-SiC quantum dot arrays epitaxially grown on Si substrates. Using transmission electron microscopy we show how the crystalline quality of the Si cap depends on the growth conditions. Overgrowth at 300ºC leads to a planar, epitaxial Si cap, but with small crystallographic rotations in the cap above each quantum dot. At 400ºC growth temperature, Si exhibits reduced sticking to the SiC, leading to a non-planar cap. However, a two-step process, with thin layer grown at 250ºC followed by growth at 500ºC, leads to a planar cap with a much-reduced density of defects.
Citation: Applied Physics Letters
Volume: 104
Issue: 1
Research Areas: Electron microscopy (EM, TEM, SEM, STEM), Semiconductor Materials, Quantum Devices, Academic
DOI: http://dx.doi.org/http://dx.doi.org/10.1063/1.4859695  (Note: May link to a non-U.S. Government webpage)
PDF version: PDF Document Click here to retrieve PDF version of paper (2MB)