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Publication Citation: Gaps Analysis for CD Metrology Beyond the 22 nm Node

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Author(s): Benjamin D. Bunday; Thomas A. Germer; Victor H. Vartanian; Aaron Cordes; Aron Cepler; Charles Settens;
Title: Gaps Analysis for CD Metrology Beyond the 22 nm Node
Published: April 10, 2013
Abstract: This paper will examine the future for critical dimension (CD) metrology. First we will present the extensive list of applications for which CD metrology solutions are needed, showing commonalities and differences among the various applications. We will then report on the expected technical limits of the metrology solutions currently being investigated by SEMATECH and others in the industry to address the metrology challenges of future nodes, including conventional CD scanning electron microscopy (CD-SEM) and optical critical dimension (OCD) metrology and new potential solutions such as He-ion microscopy (HeIM), CD atomic force microscopy (CD-AFM), CD small-angle x-ray scattering (CD-SAXS), high voltage scanning electron microscopy (HV-SEM), and other variants. A technical gap analysis matrix will then be demonstrated, showing the current state of understanding of the future of the CD metrology space.
Proceedings: Metrology, Inspection, and Process Control for Microlithography XXVII
Volume: 8681
Pages: pp. 86813B-1 - 86813B-29
Location: San Jose, CA
Dates: February 24-28, 2013
Keywords: Critical dimension, gaps analysis, metrology, OCD, CD-SEM, CD, CD-SAXS, scatterometry, FinFET, HAR
Research Areas: Consortiums, Dimensional Metrology
DOI: http://dx.doi.org/10.1117/12.2012472  (Note: May link to a non-U.S. Government webpage)