NIST logo

Publication Citation: Tunable electrical conductivity in metal-organic framework thin film devices

NIST Authors in Bold

Author(s): Albert A. Talin; Andrea Centrone; Alexandra C. Ford; Michael E. Foster; Vitalie Stavila; Paul M. Haney; Robert A. Kinney; Veronika A. Szalai; Farid El Gabaly; Heayoung Yoon; Francois Leonard; Mark Allendorf;
Title: Tunable electrical conductivity in metal-organic framework thin film devices
Published: January 03, 2014
Abstract: We report a strategy for realizing tunable electrical conductivity in MOFs in which the nanopores are infiltrated with redox-active, conjugated guest molecules. This approach is demonstrated using thin-film devices of the MOF Cu3(BTC)2 (also known as HKUST-1) infiltrated with the molecule 7,7,8,8-tetracyanoquinododimethane (TCNQ). Tunable, air-stable electrical conductivity over six orders of magnitude is achieved, with values as high as 7 S/m. Spectroscopic data and first-principles modeling suggest unique conductivity mechanism occurring via TCNQ guest molecules bridging the binuclear copper paddlewheels in the framework leading to strong electronic coupling between the dimeric Cu subunits. These Ohmically conducting porous MOFs are prototypes for a novel class of materials that opens routes for entirely new applications.
Citation: Science
Volume: 343
Issue: 6166
Pages: pp. 66 - 69
Keywords: Metal-organic framework; electrical conductivity; nanopores
Research Areas: Thin-Films, Characterization, Nanomaterials, Advanced Materials, Molecular Electronics
PDF version: PDF Document Click here to retrieve PDF version of paper (2MB)