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Publication Citation: The Series Resistance Component of Hot Carrier Degradation in Ultra-Short Channel Devices

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Author(s): Jason P. Campbell; Kin P. Cheung; Anthony Oates;
Title: The Series Resistance Component of Hot Carrier Degradation in Ultra-Short Channel Devices
Published: April 22, 2013
Abstract: Our measurements reveal that, similar to much larger power device geometries, hot carrier degradation in ultra-short channel devices involves (1) presumably defect generation-based parametric shifts in threshold voltage/transconductance and (2) an enhancement in series resistance. We show that the series resistance component, which has been seemingly overlooked for ultra-short channel devices, cannot be ignored.
Conference: 2013 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA)
Location: Hsinchu, -1
Dates: April 22-24, 2013
Research Areas: Characterization