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NIST Authors in Bold
|Author(s):||Jason P. Campbell; Kin P. Cheung; Anthony Oates;|
|Title:||The Series Resistance Component of Hot Carrier Degradation in Ultra-Short Channel Devices|
|Published:||April 22, 2013|
|Abstract:||Our measurements reveal that, similar to much larger power device geometries, hot carrier degradation in ultra-short channel devices involves (1) presumably defect generation-based parametric shifts in threshold voltage/transconductance and (2) an enhancement in series resistance. We show that the series resistance component, which has been seemingly overlooked for ultra-short channel devices, cannot be ignored.|
|Conference:||2013 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA)|
|Dates:||April 22-24, 2013|