NIST logo

Publication Citation: Single-photon detection efficiency up to 50% at 1310 nm with an InGaAs/InP avalanche diode gated at 1.25 GHz

NIST Authors in Bold

Author(s): Alessandro Restelli; Joshua C. Bienfang; Alan L. Migdall;
Title: Single-photon detection efficiency up to 50% at 1310 nm with an InGaAs/InP avalanche diode gated at 1.25 GHz
Published: April 10, 2013
Abstract: We describe a gated Geiger-mode single-photon avalanche diode (SPAD) detection system in which both gating and avalanche discrimination are implemented by coherent addition of discrete harmonics of the fundamental gate frequency. With amplitude and phase control for each harmonic at the cathode we form < 300 ps bias gates, and with similar control at the anode we cancel the gate transient with > 65 dB suppression, allowing avalanche-discrimination thresholds at the anode below 2 mV, or < 10 fC. The low threshold not only accurately discriminates diminutive avalanches, but also achieves usable detection efficiencies with lower total charge, reducing the afterpulse probability and allowing the use of gate pulses that exceed the SPAD breakdown voltage by more than 10 V, both of which increase detection efficiency. With detection efficiency of 0.19 ± 0.01 we measure per-gate afterpulse probability below 6.5 x 10^(-4) after 3.2 ns, and with detection efficiency of 0.51 ± 0.02 we measure per-gate afterpulse probability below 3.5 x 10^(-3) after 10 ns.
Citation: Applied Physics Letters
Volume: 102
Pages: 4 pp.
Keywords: Single Photon Detection; Avalanche Photodiodes
Research Areas: Single Photon Detectors
DOI: http://dx.doi.org/10.1063/1.4801939  (Note: May link to a non-U.S. Government webpage)
PDF version: PDF Document Click here to retrieve PDF version of paper (984KB)