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|Author(s):||Qin Q. Zhang; Rui Li; Rusen Yan; Thomas Kosel; Grace Xing; Alan Seabaugh; Kun Xu; Oleg A. Kirillov; David J. Gundlach; Curt A. Richter; Nhan V. Nguyen;|
|Title:||A Unique Photoemission Method to Measure Semiconductor Heterojunction Band Offsets|
|Published:||January 02, 0013|
|Abstract:||We report a unique way to measure the energy band offset of a heterojunction by exploiting the light absorption profile in the heterojunction under visible-ultraviolet internal photoemission. This method was used to successfully determine the band alignment of W/Al2O3/n+InAs/p+Al0.45Ga0.55Sb heterojunctions that are of interest for tunnel field-effect transistors. The barrier heights from the InAs and Al0.45Ga0.55Sb valence band maxima to the Al2O3 conduction band minimum are found to be 3.24 eV ± 0.05 eV and 2.79 eV ± 0.05 eV, respectively, yielding a 0.4 eV ± 0.1 eV offset at the InAs/AlGaSb interface. This novel approach can readily be applied to characterize a wide range of other semiconductor heterojunctions.|
|Citation:||Applied Physics Letters|
|Keywords:||Internal photoemission,heterojunction,band offset|
|Research Areas:||Semiconductors, Characterization|
|PDF version:||Click here to retrieve PDF version of paper (1MB)|