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NIST Authors in Bold
|Author(s):||Jason T. Ryan; Brad Bittel; Pat Lenahan; Jody Fronheiser; Aivars Lelis;|
|Title:||Observation of Interface/Near Interface Defects in 4H SiC MOSFETs With a New Electrically Detected Magnetic Resonance Technique|
|Published:||January 01, 2013|
|Abstract:||We study 4H SiC MOSFETs with a new electrically detected magnetic resonance technique (EDMR) we call spin dependent charge pumping (SDCP). Our SDCP results demonstrate a tremendous improvement in sensitivity over other EDMR techniques. Additionally SDCP has the ability to access defects distributed over a wider energy range of the SiC bandgap.|
|Conference:||International Conference on Silicon Carbide and Related Materials|
|Proceedings:||Proceedings of the International Conference on Silicon Carbide and Related Materials|
|Dates:||September 11-16, 2011|
|Research Areas:||Electronics & Telecommunications, Characterization|