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Publication Citation: Observation of Interface/Near Interface Defects in 4H SiC MOSFETs With a New Electrically Detected Magnetic Resonance Technique

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Author(s): Jason T. Ryan; Brad Bittel; Pat Lenahan; Jody Fronheiser; Aivars Lelis;
Title: Observation of Interface/Near Interface Defects in 4H SiC MOSFETs With a New Electrically Detected Magnetic Resonance Technique
Published: January 01, 2013
Abstract: We study 4H SiC MOSFETs with a new electrically detected magnetic resonance technique (EDMR) we call spin dependent charge pumping (SDCP). Our SDCP results demonstrate a tremendous improvement in sensitivity over other EDMR techniques. Additionally SDCP has the ability to access defects distributed over a wider energy range of the SiC bandgap.
Conference: International Conference on Silicon Carbide and Related Materials
Proceedings: Proceedings of the International Conference on Silicon Carbide and Related Materials
Location: Cleveland, OH
Dates: September 11-16, 2011
Research Areas: Electronics & Telecommunications, Characterization