NIST logo

Publication Citation: Gallium Nitride Nanowires for On-Chip Optical Interconnects on Ex-Situ Substrates

NIST Authors in Bold

Author(s): Matthew D. Brubaker; Paul T. Blanchard; John B. Schlager; Aric W. Sanders; Alexana Roshko; Shannon M. Duff; Jason Gray; Victor M. Bright; Norman A. Sanford; Kristine A. Bertness;
Title: Gallium Nitride Nanowires for On-Chip Optical Interconnects on Ex-Situ Substrates
Published: January 16, 2013
Abstract: In this letter we report on the fabrication, device characteristics, and optical coupling of a two-nanowire device comprising light-emitting diode and photoconductive GaN nanowires. Axial p-n junction GaN nanowires were grown by molecular beam epitaxy, transferred to an ex-situ substrate, and selectively contacted to form discrete optical source or detector nanowire components. The optical coupling demonstrated for this device could provide new opportunities for integration of optical interconnects with traditional CMOS and MEMS devices.
Citation: Nano Letters
Pages: pp. 374 - 377
Keywords: Nanowires; gallium nitride; light-emitting diodes; photoconductivity; optical interconnects
Research Areas: Nanowires, Semiconductor Materials, Optoelectronics, Device Design and Characterization
DOI: http://dx.doi.org/10.1021/nl303510h  (Note: May link to a non-U.S. Government webpage)