Take a sneak peek at the new NIST.gov and let us know what you think!
(Please note: some content may not be complete on the beta site.).
NIST Authors in Bold
|Author(s):||Matthew D. Brubaker; Paul T. Blanchard; John B. Schlager; Aric W. Sanders; Alexana Roshko; Shannon M. Duff; Jason Gray; Victor M. Bright; Norman A. Sanford; Kristine A. Bertness;|
|Title:||Gallium Nitride Nanowires for On-Chip Optical Interconnects on Ex-Situ Substrates|
|Published:||January 16, 2013|
|Abstract:||In this letter we report on the fabrication, device characteristics, and optical coupling of a two-nanowire device comprising light-emitting diode and photoconductive GaN nanowires. Axial p-n junction GaN nanowires were grown by molecular beam epitaxy, transferred to an ex-situ substrate, and selectively contacted to form discrete optical source or detector nanowire components. The optical coupling demonstrated for this device could provide new opportunities for integration of optical interconnects with traditional CMOS and MEMS devices.|
|Pages:||pp. 374 - 377|
|Keywords:||Nanowires, gallium nitride, light-emitting diodes, photoconductivity, optical interconnects|
|Research Areas:||Nanowires, Device Design and Characterization, Optoelectronics, Semiconductor Materials|
|DOI:||http://dx.doi.org/10.1021/nl303510h (Note: May link to a non-U.S. Government webpage)|