Take a sneak peek at the new NIST.gov and let us know what you think!
(Please note: some content may not be complete on the beta site.).
NIST Authors in Bold
|Author(s):||Kun Xu; Caifu Zeng; Qin Q. Zhang; Rusen Yan; Peide Ye; Kang Wang; Alan C. Seabaugh; Huili G. Xing; John S. Suehle; Curt A. Richter; David J. Gundlach; Nhan V. Nguyen;|
|Title:||Direct Measurement of Intrinsic Dirac Point and Fermi level at Graphene/Oxide interface and Its Band Alignment by Cavity Enhanced Internal Photoemission|
|Published:||December 17, 0012|
|Abstract:||We report the first direct measurement of the Dirac point, the Fermi level, and the work function of graphene by performing internal photoemission measurements on a graphene/SiO2/Si structure with a unique optical-cavity enhanced test structure. A complete electronic band alignment at the graphene/SiO2/Si interfaces is accurately constructed. The observation of enhanced photoemission from a one-atom thick graphene layer was possible by taking advantage of the optical interference in the SiO2 cavity. The photoemission yield was found to follow the well-known linear density-of- states dispersion in the vicinity of the Dirac point. At the flat band condition, the Fermi level was extracted and found to reside 3.3 eV below the bottom of SiO2 conduction band. When combined with the shift of the Fermi level from the Dirac point we are able to unambiguously ascertain the position of the Dirac point at 3.6 eV with respect to the bottom of the SiO2 conduction band; yielding a work function of 4.5 eV which is in an excellent agreement with theory.|
|Pages:||pp. 131 - 136|
|Keywords:||graphene, work function, internal photoemission, band alignment, graphene-insulator-semiconductor|
|Research Areas:||Advanced Materials, Characterization|
|PDF version:||Click here to retrieve PDF version of paper (2MB)|