Take a sneak peek at the new NIST.gov and let us know what you think!
(Please note: some content may not be complete on the beta site.).

View the beta site
NIST logo

Publication Citation: On the Contribution of Bulk Defects on Charge Pumping Current

NIST Authors in Bold

Author(s): Jason T. Ryan; Richard G. Southwick; Jason P. Campbell; Kin P. Cheung; John S. Suehle;
Title: On the Contribution of Bulk Defects on Charge Pumping Current
Published: October 01, 2012
Abstract: Frequency dependent charge pumping (FD-CP) has emerged as a popular technique for studying the spatial and energetic distribution of defect centers in advanced high-k gate stacks. However, conflicting interpretations of the charge pumping frequency - defect depth relationship has led to controversial and inconsistent findings between various groups. A key assumption is that most, if not all, bulk defect trapping/detrapping contributes to the charge pumping current. In this study, we show, experimentally using two independent measurements, that there is a large discrepancy between the total amount of bulk defect trapping/detrapping that occurs and the actual charge pumping contribution due to these defects. We argue that the charge pumping current due to bulk defects depends heavily upon the specific device geometry/technology, the minority carrier lifetime, and FD-CP‰s general inability to function as a defect profiling tool.
Citation: IEEE Transactions on Electron Devices
Research Areas: Characterization
PDF version: PDF Document Click here to retrieve PDF version of paper (661KB)