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|Author(s):||Jason P. Campbell; Kin P. Cheung; Serghei Drozdov; Richard G. Southwick; Jason T. Ryan; Tony Oates; John S. Suehle;|
|Title:||Channel Length-Dependent Series Resistance?|
|Published:||June 10, 2012|
|Abstract:||A recently developed series resistance (RSD) extraction procedure from a single nanoscale device is shown to be highly robust. Despite these virtues, the technique unexpectedly results in a channel length-dependent RSD which is observed across a wide range of channel lengths and across many different technologies (SiO2, SiON, and high-k) (see Figs. 1a-f). This observation obviously raises some concerning issues and implications as RSD is universally accepted as channel length-independent. However, careful examination of the RSD extraction procedure as well as comparison between RSD-corrected field effect mobility (uFE) and geometric magnetoresistance mobility (uMR) suggests that this unexpected observation may be valid.|
|Conference:||2012 Silicon Nanoelectronics Workshop|
|Pages:||pp. 153 - 154|
|Dates:||June 10-11, 2012|
|Research Areas:||Device Design and Characterization|