| Author(s): |
Jason P. Campbell; Kin P. Cheung; Serghei Drozdov; Richard G. Southwick; Jason T. Ryan; Tony Oates; John S. Suehle; |
| Title: |
Channel Length-Dependent Series Resistance? |
| Published: |
June 10, 2012 |
| Abstract: |
A recently developed series resistance (RSD) extraction procedure from a single nanoscale device is shown to be highly robust. Despite these virtues, the technique unexpectedly results in a channel length-dependent RSD which is observed across a wide range of channel lengths and across many different technologies (SiO2, SiON, and high-k) (see Figs. 1a-f). This observation obviously raises some concerning issues and implications as RSD is universally accepted as channel length-independent. However, careful examination of the RSD extraction procedure as well as comparison between RSD-corrected field effect mobility (uFE) and geometric magnetoresistance mobility (uMR) suggests that this unexpected observation may be valid. |
| Conference: |
2012 Silicon Nanoelectronics Workshop |
| Pages: |
pp. 153 - 154 |
| Location: |
Honolulu, HI |
| Dates: |
June 10-11, 2012 |
| Research Areas: |
Device Design and Characterization |
