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Publication Citation: Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires

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Author(s): Christopher M. Dodson; Patrick Parkinson; Kristine A. Bertness; Hannah J. Joyce; Laura M. Herz; Norman A. Sanford; Michael B. Johnston;
Title: Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires
Published: August 27, 2012
Abstract: The first noncontact photoconductivity measurements of gallium nitride nanowires (NWs) are presented, revealing a high crystallographic and optoelectronic quality achieved by use of catalyst-free molecular beam epitaxy. In comparison with bulk material, the NWs exhibit a long conductivity lifetime (>2 ns) and a high mobility (820 {plus or minus} 120 cm2/(V s)). This is due to the weak influence of surface traps with respect to other III-V semiconducting NWs and to the favorable crystalline structure of the NWs achieved via strain-relieved growth.
Citation: Nano Letters
Volume: 12
Issue: 9
Pages: pp. 4600 - 4604
Keywords: semiconductor transport properties; gallium nitride; GaN; nanowires; terahertz spectroscopy
Research Areas: Nanomanufacturing, Nanomaterials, Optoelectronics, Terahertz Technology
DOI: http://dx.doi.org/10.1021/nl301898m  (Note: May link to a non-U.S. Government webpage)
PDF version: PDF Document Click here to retrieve PDF version of paper (2MB)