Take a sneak peek at the new NIST.gov and let us know what you think!
(Please note: some content may not be complete on the beta site.).
NIST Authors in Bold
|Author(s):||Jason T. Ryan; Richard G. Southwick; Jason P. Campbell; Kin P. Cheung; Chadwin Young; John S. Suehle;|
|Title:||Experimentally Based Methodology for Charge Pumping Bulk Defect Trapping Correction|
|Published:||December 15, 2011|
|Abstract:||We develop a simple experimental approach to remove bulk trap contributions from charge pumping data collected on devices which suffer from large amounts of bulk dielectric electron trapping. The approach is more desirable and easier to implement than other simulation/device modeling based approaches. We demonstrate the approach using HfO2 based MOSFETs. Additionally, we provide an explanation for the smaller than expected bulk trap contribution to charge pumping current.|
|Conference:||International Integrated Reliability Workshop|
|Proceedings:||International Integrated Reliability Workshop Final Report|
|Pages:||pp. 23 - 26|
|Location:||South Lake Tahoe, CA|
|Dates:||October 16-21, 2011|