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NIST Authors in Bold
|Author(s):||Mariano A. Real; Tian T. Shen; George R. Jones; Randolph E. Elmquist; Johannes A. Soons; Albert Davydov;|
|Title:||Graphene Epitaxial Growth on SiC(0001) for Resistance Standards|
|Published:||June 01, 2012|
|Abstract:||Epitaxial growth of graphene layers on 6H-SiC(0001) substrates have been studied in order to improve graphene‰s performance for metrological applications. A face-to-face (FTF) sublimation method at 2000 °C and in Ar background atmosphere is used to inhibit the rates of SiC decomposition and Si sublimation and as a means of controlling the graphene layer development. Sample surface morphology and its relation to changes in the growth conditions are described.|
|Proceedings:||Conference on Precision Electromagnetic Measurements 2012|
|Pages:||pp. 600 - 601|
|Dates:||June 30-July 6, 2012|
|Keywords:||Electrical resistance standards, epitaxial growth, graphene, surface morphology, quantum Hall effect|
|Research Areas:||Advanced Materials, Nanoelectronics and Nanoscale Electronics|