| Author(s): |
Mariano A. Real; Tian T. Shen; George R. Jones; Randolph E. Elmquist; Johannes A. Soons; Albert Davydov; |
| Title: |
Graphene Epitaxial Growth on SiC(0001) for Resistance Standards |
| Published: |
June 01, 2012 |
| Abstract: |
Epitaxial growth of graphene layers on 6H-SiC(0001) substrates have been studied in order to improve graphene’s performance for metrological applications. A face-to-face (FTF) sublimation method at 2000 °C and in Ar background atmosphere is used to inhibit the rates of SiC decomposition and Si sublimation and as a means of controlling the graphene layer development. Sample surface morphology and its relation to changes in the growth conditions are described. |
| Proceedings: |
Conference on Precision Electromagnetic Measurements 2012
|
| Pages: |
pp. 600 - 601 |
| Location: |
Washington, DC |
| Dates: |
June 30-July 6, 2012 |
| Keywords: |
Electrical resistance standards; epitaxial growth; graphene; surface morphology; quantum Hall effect |
| Research Areas: |
Advanced Materials, Nanoelectronics and Nanoscale Electronics |
