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Publication Citation: Graphene Epitaxial Growth on SiC(0001) for Resistance Standards

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Author(s): Mariano A. Real; Tian T. Shen; George R. Jones; Randolph E. Elmquist; Johannes A. Soons; Albert Davydov;
Title: Graphene Epitaxial Growth on SiC(0001) for Resistance Standards
Published: June 01, 2012
Abstract: Epitaxial growth of graphene layers on 6H-SiC(0001) substrates have been studied in order to improve graphene‰s performance for metrological applications. A face-to-face (FTF) sublimation method at 2000 °C and in Ar background atmosphere is used to inhibit the rates of SiC decomposition and Si sublimation and as a means of controlling the graphene layer development. Sample surface morphology and its relation to changes in the growth conditions are described.
Proceedings: Conference on Precision Electromagnetic Measurements 2012
Pages: pp. 600 - 601
Location: Washington, DC
Dates: June 30-July 6, 2012
Keywords: Electrical resistance standards, epitaxial growth, graphene, surface morphology, quantum Hall effect
Research Areas: Advanced Materials, Nanoelectronics and Nanoscale Electronics