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Publication Citation: Comparison of Au-In Transient Liquid Phase Bonding Designs for SiC Power Semiconductor Device Packaging

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Author(s): Brian J. Grummel; Z. J. Shen; Allen R. Hefner Jr;
Title: Comparison of Au-In Transient Liquid Phase Bonding Designs for SiC Power Semiconductor Device Packaging
Published: July 18, 2011
Abstract: Transient liquid phase (TLP) bonding is an advanced die-attach technique for wide-bandgap power semiconductor and high-temperature packaging. TLP bonding advances current soldering techniques by raising the melting point to over 500 °C without detrimental high-lead materials. The bond also has greater reliability and rigidity due in part to a bonding temperature of 200 °C that drastically lowers the peak bond stresses. Furthermore, the thermal conductivity is increased 67 % while the bond thickness is substantially reduced, lowering the thermal resistance by an order of magnitude. This work provides an in-depth examination of the TLP fabrication methodology utilizing mechanical and thermal experimental characterization data along with thermal reliability results.
Conference: Proceedings of the International Conference and Exhibition on High Temperature Electronics Network (HiTEN)
Proceedings: International Conference and Exhibition on High Temperature Electronics Network (HiTEN)
Pages: 7 pp.
Location: Oxford, -1
Dates: July 17-18, 2011
Research Areas: Electric Power Metrology
PDF version: PDF Document Click here to retrieve PDF version of paper (444KB)