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|Author(s):||Brian J. Grummel; Z. J. Shen; Allen R. Hefner Jr.;|
|Title:||Comparison of Au-In Transient Liquid Phase Bonding Designs for SiC Power Semiconductor Device Packaging|
|Published:||July 18, 2011|
|Abstract:||Transient liquid phase (TLP) bonding is an advanced die-attach technique for wide-bandgap power semiconductor and high-temperature packaging. TLP bonding advances current soldering techniques by raising the melting point to over 500 °C without detrimental high-lead materials. The bond also has greater reliability and rigidity due in part to a bonding temperature of 200 °C that drastically lowers the peak bond stresses. Furthermore, the thermal conductivity is increased 67 % while the bond thickness is substantially reduced, lowering the thermal resistance by an order of magnitude. This work provides an in-depth examination of the TLP fabrication methodology utilizing mechanical and thermal experimental characterization data along with thermal reliability results.|
|Conference:||Proceedings of the International Conference and Exhibition on High Temperature Electronics Network (HiTEN)|
|Proceedings:||International Conference and Exhibition on High Temperature Electronics Network (HiTEN)|
|Dates:||July 17-18, 2011|
|Research Areas:||Electric Power Metrology|
|PDF version:||Click here to retrieve PDF version of paper (444KB)|