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Publication Citation: Characterizing Equilibrium in Epitaxial Growth

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Author(s): Paul N. Patrone; Russel Caflisch; Dionisios Margetis;
Title: Characterizing Equilibrium in Epitaxial Growth
Published: February 20, 2012
Abstract: Using a kinetic model of epitaxial growth, we describe how geometry controls kinetic pathways through which external deposition influences the state of a vicinal surface. The state of the surface is determined by three key, adjustable parameters: the local step angle, Peclet number P, and single bond detachment rate b. By scaling arguments in P, we find three steady state regimes: In one regime, detailed balance approximately holds, so that the system is near equilibrium. In the other two regimes, geometric e ffects compete with deposition as the system is driven progressively out of equilibrium. Our analytical results are in excellent agreement with those of kinetic Monte Carlo simulations.
Citation: Europhysics Letters
Volume: 97
Issue: 4
Keywords: Kinetic Steady state, detailed balance, epitaxial growth, geometric control
Research Areas: Nanotechnology, Deposition, Nanophysics
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