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|Author(s):||Paul N. Patrone; Russel Caflisch; Dionisios Margetis;|
|Title:||Characterizing Equilibrium in Epitaxial Growth|
|Published:||February 20, 2012|
|Abstract:||Using a kinetic model of epitaxial growth, we describe how geometry controls kinetic pathways through which external deposition influences the state of a vicinal surface. The state of the surface is determined by three key, adjustable parameters: the local step angle, Peclet number P, and single bond detachment rate b. By scaling arguments in P, we find three steady state regimes: In one regime, detailed balance approximately holds, so that the system is near equilibrium. In the other two regimes, geometric e ffects compete with deposition as the system is driven progressively out of equilibrium. Our analytical results are in excellent agreement with those of kinetic Monte Carlo simulations.|
|Keywords:||Kinetic Steady state, detailed balance, epitaxial growth, geometric control|
|Research Areas:||Nanotechnology, Deposition, Nanophysics|
|PDF version:||Click here to retrieve PDF version of paper (227KB)|