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|Author(s):||Jason T. Ryan; Liangchun (. Yu; Jae Han; Joseph J. Kopanski; Kin P. Cheung; Fei Zhang; Chen Wang; Jason P. Campbell; John S. Suehle;|
|Title:||Spectroscopic charge pumping investigation of the amphoteric nature of Si/SiO2 interface states|
|Published:||June 06, 2011|
|Abstract:||The amphoteric nature of Si/SiO2 interface states in submicron sized metal-oxide-silicon-field-effect-transistors is observed using an enhanced spectroscopic charge pumping method. The method‰s simplicity and high sensitivity makes it a powerful tool for interrogating the true nature of electrically measured interface states in samples which exhibit extremely low defect densities. The spectroscopic results obtained clearly illustrate a signature ,double peakŠ density of states consistent with amphoteric Pb center data obtained from electron spin resonance measurements. Since the method is a hybrid of the commonly used charge pumping methodology, it should find widespread use in electronic device characterization.|
|Citation:||Applied Physics Letters|
|Research Areas:||Semiconductors, Characterization|
|PDF version:||Click here to retrieve PDF version of paper (277KB)|