| Author(s): |
Jason T. Ryan; Liangchun Yu; Jae Han; Joseph J. Kopanski; Kin P. Cheung; Fei Zhang; Chen Wang; Jason P. Campbell; John S. Suehle; |
| Title: |
Spectroscopic charge pumping investigation of the amphoteric nature of Si/SiO2 interface states |
| Published: |
June 06, 2011 |
| Abstract: |
The amphoteric nature of Si/SiO2 interface states in submicron sized metal-oxide-silicon-field-effect-transistors is observed using an enhanced spectroscopic charge pumping method. The method’s simplicity and high sensitivity makes it a powerful tool for interrogating the true nature of electrically measured interface states in samples which exhibit extremely low defect densities. The spectroscopic results obtained clearly illustrate a signature “double peak” density of states consistent with amphoteric Pb center data obtained from electron spin resonance measurements. Since the method is a hybrid of the commonly used charge pumping methodology, it should find widespread use in electronic device characterization. |
| Citation: |
Applied Physics Letters |
| Volume: |
98 |
| Pages: |
3 pp. |
| Research Areas: |
Semiconductors, Characterization |
| PDF version: |
 Click here to retrieve PDF version of paper (270KB) |
