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NIST Authors in Bold
|Author(s):||Jason T. Ryan; Liangchun (. Yu; Jae Han; Joseph J. Kopanski; Kin P. Cheung; Fei Zhang; C Wang; Jason P. Campbell; John S. Suehle; Vinayak Tilak; Jody Fronheiser;|
|Title:||A New Interface Defect Spectroscopy Method|
|Published:||April 12, 2011|
|Abstract:||A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long standing debate about the true nature of Si/SiO2 interface states. Additionally, we show that this is a powerful technique for studying other important material systems.|
|Conference:||IEEE International Reliability Physics Symposium|
|Proceedings:||Proceedings of the IEEE International Reliability Physics Symposium|
|Dates:||April 10-14, 2011|
|Keywords:||interface states, Pb centers, charge pumping|