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Publication Citation: A New Interface Defect Spectroscopy Method

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Author(s): Jason T. Ryan; Liangchun Yu; Jae Han; Joseph J. Kopanski; Kin P. Cheung; Fei Zhang; C Wang; Jason P. Campbell; John S. Suehle; Vinayak Tilak; Jody Fronheiser;
Title: A New Interface Defect Spectroscopy Method
Published: April 12, 2011
Abstract: A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long standing debate about the true nature of Si/SiO2 interface states. Additionally, we show that this is a powerful technique for studying other important material systems.
Conference: IEEE International Reliability Physics Symposium
Proceedings: Proceedings of the IEEE International Reliability Physics Symposium
Pages: 5 pp.
Location: Monterey, CA
Dates: April 10-14, 2011
Keywords: interface states; Pb centers; charge pumping
Research Areas: Characterization