| Author(s): |
Jason T. Ryan; Liangchun Yu; Jae Han; Joseph J. Kopanski; Kin P. Cheung; Fei Zhang; C Wang; Jason P. Campbell; John S. Suehle; Vinayak Tilak; Jody Fronheiser; |
| Title: |
A New Interface Defect Spectroscopy Method |
| Published: |
April 12, 2011 |
| Abstract: |
A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long standing debate about the true nature of Si/SiO2 interface states. Additionally, we show that this is a powerful technique for studying other important material systems. |
| Conference: |
IEEE International Reliability Physics Symposium |
| Proceedings: |
Proceedings of the IEEE International Reliability Physics Symposium |
| Pages: |
5 pp. |
| Location: |
Monterey, CA |
| Dates: |
April 10-14, 2011 |
| Keywords: |
interface states; Pb centers; charge pumping |
| Research Areas: |
Characterization |
