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|Author(s):||Aric W. Sanders; Paul T. Blanchard; Kristine A. Bertness; Matthew D. Brubaker; Ann C. Chiaramonti Debay; Christopher M. Dodson; Todd E. Harvey; Andrew M. Herrero; Devin M. Rourke; John B. Schlager; Norman A. Sanford; Albert Davydov; Abhishek Motayed; Denis Tsvetkov;|
|Title:||Homoepitaxial n-core: p-shell gallium nitride nanowires: HVPE overgrowth growth on MBE nanowires|
|Published:||October 25, 2011|
|Abstract:||We present the homoepitaxial growth of p-type, magnesium-doped gallium nitride shells using halide vapor phase epitaxy on n-type gallium nitride nanowires grown by plasma-assisted molecular beam epitaxy. Scanning electron microscopy shows clear dopant contrast between the core and shell of the nanowire. The growth of magnesium-doped nanowire shells shows little or no effect on the lattice parameters of the underlying nanowires, as measured by x-ray diffraction (XRD). In contrast, photoluminescence of the nanowires show the prominent appearance of Mg related features. Finally, electrical measurements confirm the presence of electrically active holes in the nanowires.|
|Keywords:||Gallium Nitride Nanowires, PAMBE, HVPE, Nanotechnology, X-ray diffraction, SEM Contrast, Photoluminescence, Minority Carrier Injection|
|PDF version:||Click here to retrieve PDF version of paper (1MB)|