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Publication Citation: Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices

NIST Authors in Bold

Author(s): Liangchun (. Yu; Kin P. Cheung; Greg Dunne; Kevin Matocha; John S. Suehle; Kuang Sheng;
Title: Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices
Published: October 14, 2009
Abstract:
Pages: 30 pp.
Research Areas: Semiconductors