| Author(s): |
Yvonne B. Gerbig; Stephan J. Stranick; Robert F. Cook; |
| Title: |
Direct observation of phase transformation anisotropy in indented silicon using confocal Raman microscopy |
| Published: |
May 31, 2011 |
| Abstract: |
The theoretically-predicted anisotropic nature of the indentation phase transformation in silicon (Si) is observed directly in experiments using hyperspectral, confocal Raman microscopy. The anisotropy is reflected in the two-dimensional distribution of the residual diamond cubic phase and high-pressure phases in indented Si(001), Si(110), and Si(111) surfaces, and is linked to the number and orientation of the {111}<110> slip systems of the diamond cubic phase that are activated during indentation. |
| Citation: |
Physical Review Letters |
| Volume: |
83 |
| Pages: |
pp. 205209-1 - 205209-5 |
| Keywords: |
Raman microscopy; phase transformation; silicon; nanoindentation |
| Research Areas: |
Semiconductor Materials, Materials Science |
