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Publication Citation: Direct observation of phase transformation anisotropy in indented silicon using confocal Raman microscopy

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Author(s): Yvonne B. Gerbig; Stephan J. Stranick; Robert F. Cook;
Title: Direct observation of phase transformation anisotropy in indented silicon using confocal Raman microscopy
Published: May 31, 2011
Abstract: The theoretically-predicted anisotropic nature of the indentation phase transformation in silicon (Si) is observed directly in experiments using hyperspectral, confocal Raman microscopy. The anisotropy is reflected in the two-dimensional distribution of the residual diamond cubic phase and high-pressure phases in indented Si(001), Si(110), and Si(111) surfaces, and is linked to the number and orientation of the {111}<110> slip systems of the diamond cubic phase that are activated during indentation.
Citation: Physical Review Letters
Volume: 83
Pages: pp. 205209-1 - 205209-5
Keywords: Raman microscopy; phase transformation; silicon; nanoindentation
Research Areas: Semiconductor Materials, Materials Science