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Publication Citation: On the 60 mV/dec @300 K Limit for MOSFET Subthreshold Swing

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Author(s): Kin P. Cheung;
Title: On the 60 mV/dec @300 K Limit for MOSFET Subthreshold Swing
Published: April 26, 2010
Abstract: The 60 mV/dec limit for subthreshold swing at 300K is generally considered a fundamental limit that cannot be defeated. The physical origin of this limit is revisited in this paper and the fact that this limit is in part determined by the density-ofstates(DOS) of the source is highlighted. A scheme of engineering this DOS is proposed as a possible way to achieve subthreshold swing much lower than the 60 mV/dec value.
Proceedings: VLSI-TSA
Pages: 2 pp.
Location: Shinchu, -1
Dates: April 26-28, 2010
Keywords: STEEP; subthreshold; FET, Density of states
Research Areas: Energy Efficiency