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|Author(s):||Kin P. Cheung;|
|Title:||On the 60 mV/dec @300 K Limit for MOSFET Subthreshold Swing|
|Published:||April 26, 2010|
|Abstract:||The 60 mV/dec limit for subthreshold swing at 300K is generally considered a fundamental limit that cannot be defeated. The physical origin of this limit is revisited in this paper and the fact that this limit is in part determined by the density-ofstates(DOS) of the source is highlighted. A scheme of engineering this DOS is proposed as a possible way to achieve subthreshold swing much lower than the 60 mV/dec value.|
|Dates:||April 26-28, 2010|
|Keywords:||STEEP, subthreshold, FET, Density of states|
|Research Areas:||Energy Efficiency|