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|Author(s):||Thomas R. Gentile; Steven W. Brown; Keith R. Lykke; Ping-Shine Shaw; John T. Woodward IV;|
|Title:||Internal quantum efficiency modeling of silicon photodiodes|
|Published:||April 01, 2010|
|Abstract:||Results are presented for modeling of the internal quantum efficiency (IQE) of silicon photodiodes in the 400 nm to 900 nm wavelength range. The IQE data are based on measurements of the external quantum efficiencies of three transmission trap detectors using an extensive set of laser wavelengths, along with the transmittance of the traps. We find that a simplified version of a previously reported IQE model fits the data with an accuracy of better than 0.01 %|
|Pages:||pp. 1857 - 1864|
|Keywords:||optical metrology, radiometry, responsivity, silicon, trap detector|
|Research Areas:||Optical Metrology|
|PDF version:||Click here to retrieve PDF version of paper (756KB)|