Take a sneak peek at the new NIST.gov and let us know what you think!
(Please note: some content may not be complete on the beta site.).

View the beta site
NIST logo

Publication Citation: Internal quantum efficiency modeling of silicon photodiodes

NIST Authors in Bold

Author(s): Thomas R. Gentile; Steven W. Brown; Keith R. Lykke; Ping-Shine Shaw; John T. Woodward IV;
Title: Internal quantum efficiency modeling of silicon photodiodes
Published: April 01, 2010
Abstract: Results are presented for modeling of the internal quantum efficiency (IQE) of silicon photodiodes in the 400 nm to 900 nm wavelength range. The IQE data are based on measurements of the external quantum efficiencies of three transmission trap detectors using an extensive set of laser wavelengths, along with the transmittance of the traps. We find that a simplified version of a previously reported IQE model fits the data with an accuracy of better than 0.01 %
Citation: Applied Optics
Volume: 49
Pages: pp. 1857 - 1864
Keywords: optical metrology, radiometry, responsivity, silicon, trap detector
Research Areas: Optical Metrology
PDF version: PDF Document Click here to retrieve PDF version of paper (756KB)