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Publication Citation: Band Offsets of Al2O3 / In1-xGaxAs (x = 0.53 and 0.75) and the Effects of Post-Deposition Annealing

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Author(s): Nhan V. Nguyen; Min Xu; Oleg A. Kirillov; Pei D. Ye; C Wang; Kin P. Cheung; John S. Suehle;
Title: Band Offsets of Al2O3 / In1-xGaxAs (x = 0.53 and 0.75) and the Effects of Post-Deposition Annealing
Published: February 02, 2010
Abstract: Band offsets at the interfaces of InxGa1-xAs / Al2O3 / Al where x = 0.53 and x = 0.75 were determined by internal photoemission and spectroscopic ellipsometry. The photoemission energy threshold at the InxGa1-xAs / Al2O3 interface was found to be insensitive to the Indium composition, but shifted to a lower energy after a post-deposition annealed at high temperatures. Sub-threshold electron photoemission was also observed for the annealed sample attributing to interfacial layer formation during the annealing process.
Citation: Applied Physics Letters
Volume: 96
Pages: 3 pp.
Keywords: Al2O3; InGaAs; ALD; internal photoemission; ellipsometry; MOS; band offset; band alignment
Research Areas: Semiconductor Materials, Microelectronics
PDF version: PDF Document Click here to retrieve PDF version of paper (206KB)