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|Author(s):||Nhan V. Nguyen; Min Xu; Oleg A. Kirillov; Pei D. Ye; C Wang; Kin P. Cheung; John S. Suehle;|
|Title:||Band Offsets of Al2O3 / In1-xGaxAs (x = 0.53 and 0.75) and the Effects of Post-Deposition Annealing|
|Published:||February 02, 2010|
|Abstract:||Band offsets at the interfaces of InxGa1-xAs / Al2O3 / Al where x = 0.53 and x = 0.75 were determined by internal photoemission and spectroscopic ellipsometry. The photoemission energy threshold at the InxGa1-xAs / Al2O3 interface was found to be insensitive to the Indium composition, but shifted to a lower energy after a post-deposition annealed at high temperatures. Sub-threshold electron photoemission was also observed for the annealed sample attributing to interfacial layer formation during the annealing process.|
|Citation:||Applied Physics Letters|
|Keywords:||Al2O3, InGaAs, ALD, internal photoemission, ellipsometry, MOS, band offset, band alignment|
|Research Areas:||Semiconductor Materials, Microelectronics|
|PDF version:||Click here to retrieve PDF version of paper (206KB)|