| Author(s): |
Nhan V. Nguyen; Min Xu; Oleg A. Kirillov; Pei D. Ye; C Wang; Kin P. Cheung; John S. Suehle; |
| Title: |
Band Offsets of Al2O3 / In1-xGaxAs (x = 0.53 and 0.75) and the Effects of Post-Deposition Annealing |
| Published: |
February 02, 2010 |
| Abstract: |
Band offsets at the interfaces of InxGa1-xAs / Al2O3 / Al where x = 0.53 and x = 0.75 were determined by internal photoemission and spectroscopic ellipsometry. The photoemission energy threshold at the InxGa1-xAs / Al2O3 interface was found to be insensitive to the Indium composition, but shifted to a lower energy after a post-deposition annealed at high temperatures. Sub-threshold electron photoemission was also observed for the annealed sample attributing to interfacial layer formation during the annealing process. |
| Citation: |
Applied Physics Letters |
| Volume: |
96 |
| Pages: |
3 pp. |
| Keywords: |
Al2O3; InGaAs; ALD; internal photoemission; ellipsometry; MOS; band offset; band alignment |
| Research Areas: |
Semiconductor Materials, Microelectronics |
| PDF version: |
 Click here to retrieve PDF version of paper (201KB) |
