Levin, I.
, Davydov, A.
, Kryliouk, O.
, Park, H.
, Won, Y.
, Anderson, T.
, Kim, J.
and Freitas, J.
(2017),
Controlled Synthesis of Single-Crystalline InN Nanorods, Nano Letters
(Accessed April 19, 2024)
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Controlled Synthesis of Single-Crystalline InN Nanorods
Published
Author(s)
, , O M. Kryliouk, Hyun Jong Park, YongSun Won, T J. Anderson, J P. Kim, J A. Freitas
Abstract
Single-crystalline InN nanorods were successfully grown on c-Al203, GaN, and Si substrates by non catalytic, template-free hydride metal-organic vapor phase epitaxy (H-MOVPE). Stable gas-phase oligomer formation is proposed as the nucleation mechanism for InN nanoparticle generation. It was evaluated thermodynamically and confirmed experimentally that the growth of nanorods occurs at the growth-etch transition region. Dislocation-free high quality InN nanorods with [00.1] growth axis were formed via the solid-vapor growth mechanism. Growth parameters and optimal growth conditions were determined. The nanorods diameter, density and orientation were controlled using growth temperature, substrate selection, HCI/TMI and V/III ratios. Extensive studies of the nanorods were performed by FESEM, XRD, TEM, EDS, and Raman scattering.Citation
Nano Letters
Pub Type
Journals
Keywords
growth, nanowire, nitride, semiconductor
Citation
Created February 19, 2017