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Contact Damage Produced in Si and MgO by Nanoindentation
Published
Author(s)
B Hockey
Abstract
TEM has been used to characterize the defect structures produced in Si and Mgo by Berkovich indentation at loads ranging from 0.1 mN to 5 mN. Plane-section observations are used to describe the nature of the defects and their spatial distribution about the residual impression. In Si, the observations provide a direct measure of the true area of contact under load; in Mgo, the observations provide an upper bound to the area of contact.