The Local Structure of Antimony in High Dose Antimony Implants in Silicon by XAFS and SIMS

Published

January 1, 2003

Author(s)

M A. Sahiner, S W. Novak, Joseph Woicik, Y. Takamura, P B. Griffin, J D. Plummer

Abstract

One of the important challenges in semiconductor industry is to sustain high concentration of dopant atoms electronically active in very small areas. In investigating the optimum post implantation treatment methods that will help to attain these conditions, the local structural information around the dopant atom is crucial. In this study, we have used secondary ion mass spectroscopy (SIMS) and x-ray absorption fine structure spectroscopy (XAFS) to obtain the concentration depth profiles and the local structural information around the Sb atom in laser thermal annealed (LTA) Sb implants in Si wafers. The Sb implant doses used in this work are 6.4x1015/cm2 and 2.0x1016/cm2. The XAFS results for the 6.4x1015/cm2 Sb dose sample do not exhibit any rhombohedral-Sb precipitation as the Fourier Transformed (FT) data can be fit successfully using only substitutional-Sb in the Si lattice sites. However, a multi-shell analysis of the Fourier Transformed (FT) data for the 2.0x1016/cm2 Sb dose sample clearly indicates there is a substantial contribution from the Sb-Sb scattering, which is a signature of precipitated form of Sb.

Proceedings Title

Si Front-End Junction Formation Technologies, Symposium C | | Silicon Front-End Junction Formation Technologies | Materials Research Society

Volume

717

Conference Dates

April 2-4, 2002

Conference Location

Undefined

Conference Title

Materials Research Society Symposium Proceedings

Pub Type

Conferences

Keywords

fourier transformed (FT), secondary Ion Mass Spectroscopy (SIMS), thermal annealed (LTA), x-ray absorption fine structure spectros

Citation

Sahiner, M. , Novak, S. , Woicik, J. , Takamura, Y. , Griffin, P. and Plummer, J. (2003), The Local Structure of Antimony in High Dose Antimony Implants in Silicon by XAFS and SIMS, Si Front-End Junction Formation Technologies, Symposium C | | Silicon Front-End Junction Formation Technologies | Materials Research Society, Undefined (Accessed April 23, 2024)