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|Author(s):||Charles S. Tarrio; S Grantham; M B. Squires; Robert E. Vest; Thomas B. Lucatorto;|
|Title:||Towards High Accuracy Reflectometry for Extreme-Ultraviolet Lithography|
|Published:||July 01, 2003|
|Abstract:||Currently the most demanding application of extreme ultraviolet optics is connected with the development of extreme ultraviolet lithography. Not only does each of the Mo/Si multilayer EUV stepper mirrors require the highest attainable reflectivity at 13 nm (nearly 70%), but the central wavelength of the reflectivity of these mirrors must be measured to a precision of 0.001 nm and peak reflectivity of the reflective masks to a precision of 0.12%. We report on two upgrades of our NIST/DARPA Reflectometry Facility that have given us the ability to achieve 0.1% precision and 0.3% absolute accuracy in our reflectivity measurements. A third upgrade, a monochromator with thermal and mechanical stability for improved wavelength precision, is currently in the design phase.|
|Citation:||Journal of Research (NIST JRES) -|
|Volume:||108 No. 4|
|Keywords:||extreme ultraviolet,lithography,metrology,reflectometry,synchrotron radiation|