| Author(s): |
Charles S. Tarrio; S Grantham; M B. Squires; Robert E. Vest; Thomas B. Lucatorto; |
| Title: |
Towards High Accuracy Reflectometry for Extreme-Ultraviolet Lithography |
| Published: |
July 01, 2003 |
| Abstract: |
Currently the most demanding application of extreme ultraviolet optics is connected with the development of extreme ultraviolet lithography. Not only does each of the Mo/Si multilayer EUV stepper mirrors require the highest attainable reflectivity at 13 nm (nearly 70%), but the central wavelength of the reflectivity of these mirrors must be measured to a precision of 0.001 nm and peak reflectivity of the reflective masks to a precision of 0.12%. We report on two upgrades of our NIST/DARPA Reflectometry Facility that have given us the ability to achieve 0.1% precision and 0.3% absolute accuracy in our reflectivity measurements. A third upgrade, a monochromator with thermal and mechanical stability for improved wavelength precision, is currently in the design phase. |
| Citation: |
Journal of Research (NIST JRES) - |
| Volume: |
108 No. 4 |
| Keywords: |
extreme ultraviolet;lithography;metrology;reflectometry;synchrotron radiation |
| Research Areas: |
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