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|Author(s):||Eric L. Shirley; Hadley Lawler;|
|Title:||Two-Phonon Infrared Spectra of Si and Ge: Calculating and Assigning Features|
|Published:||August 16, 2007|
|Abstract:||Third-order density-functional perturbation theory yields the terahertz/far-infrared absorption spectra for silicon and germanium, including all two-phonon combination and difference features. Temperature-dependent spectra are compared to available experimental results. Critical-point analysis is used to identify the branch and wave-vector indices of many features.|
|Citation:||Physical Review B (Condensed Matter and Materials Physics)|
|Keywords:||absorption spectrum,critical point,germanium,phonon,silicon,terahertz|
|PDF version:||Click here to retrieve PDF version of paper (637KB)|