Take a sneak peek at the new NIST.gov and let us know what you think!
(Please note: some content may not be complete on the beta site.).

View the beta site
NIST logo

Publication Citation: AlGaN Schottky Diodes for Short-Wavelength UV Applications

NIST Authors in Bold

Author(s): P P. Chow; J J. Klaassen; Robert E. Vest; J M. VanHove; A Wowchak; C Polley;
Title: AlGaN Schottky Diodes for Short-Wavelength UV Applications
Published: June 01, 2001
Abstract: High performance ultraviolet (UV) detectors have been fabricated using plasma-enhanced molecular beam epitaxy (MBE). The realized AlGaN Schottky detectors exhibit high responsivity, sharp spectral cutoff and high shunt resistance of several giga-ohns for 0.5 mm2 active area devices. Quantitative measurements have been carried out on these detectors in the photon energy range from <1 to > 10 eV (from approximately 1200 to 120 nm in wavelength). Very short UV spectral measurement of these AlGaN detectors is reported for the first time using high intensity sources. The detectors exhibited almost eight orders of magnitude in response dynamic range in that spectral span. Reliability of the devices is evaluated after exposure to repeated DUV irradiation.
Conference: Proceedings of SPIE--the International Society for Optical Engineering
Proceedings: Photodetectors: Materials and devices, Conference | 6th | Photodectors: Materials and Devices VI | SPIE
Dates: January 1, 2001
Keywords: aluminum gallium nitride,Schottky diode,ultraviolet detectors
Research Areas: