| Abstract: |
Silicon n-on-p photodiodes with 100% internal efficiency have been studied in the 160 nm to 254 nm range. Preliminary values for the quantum yield of silicon, a fundamantal property, are determined. Using these values, a trap detector for absolute flux measurement in this region, is presented. The stability under intense 193 nm irradiation, a property of importance in lithography, has been measured, and the diodes tested were found to be several orders of magnitude more stable than p-on-n diodes tested by other investigators at this wavelength. Spatial on-uniformities of the n-on-p diodes were found to be less than one percent at 254 nm and 161 nm wavelengths. |
