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|Author(s):||Zachary H. Levine; Bruce D. Ravel;|
|Title:||Identification of Materials in Integrated Circuit Interconnects Using X-Ray Absorption Near Edge Spectroscopy|
|Published:||January 01, 1999|
|Abstract:||Most integrated circuit interconnects are principally composed of a few metals, including aluminum alloyed with copper, tungsten, titanium, A13 Ti, and A12Cu, in a silica matrix. Integrated circuit interconnects have recently been proposed as a candidate system for visualization by computerized microtomography using absorption in the soft X-ray region. In this work, we demonstrate the feasibility of materials identification using volume-resolved X-ray absorption near edge spectra (XANES) obtained by tomographic reconstruction. A similar experiment could be performed with an energy-resolved high-voltage transmission electron microscope. We calculate the XANES for interconnect materials near the Al K edge, the Cu LI, LII, and LIII edges, and the Ti LII, and LIII, and compare to experiment when possible. The signal -to- noise ratio required to distinguish among the aluminum compounds from the A1 K edge spectra is shown to be about one order of magnitude higher than that needed to detect elemental aluminum.|
|Citation:||Journal of Applied Physics|
|Keywords:||integrated circuit interconnect,X-ray absorption,XANES|