NIST logo

Publication Citation: Thin-Film Resistance Thermometers on Silicon Wafers

NIST Authors in Bold

Author(s): Kenneth G. Kreider; Dean C. Ripple; William A. Kimes;
Title: Thin-Film Resistance Thermometers on Silicon Wafers
Published: March 03, 2009
Abstract: Thermal processing of semiconductors is a critical, capital intensive step in achieving high yields and profitability in the manufacturing of electronic chips such as ASICs and DRAMs. Many techniques have been developed to control the temperature of the silicon wafer during thermal processing. One way is to monitor the wafer surface temperature using thin-film sensors on instrumented test wafers. These sensors are also used to calibrate the lightpipe infrared thermometers used to monitor the wafer temperatures during processing. Members of the semiconductor fabrication industries have encouraged NIST to investigate the use of thin-film Pt resistance thermometers directly on the wafer to monitor temperatures during thermal processing. In particular it is proposed that we could achieve lower uncertainties for the measurement of temperature on silicon wafers being processed at 200 C to 600 C.
Citation: Measurement Science & Technology
Keywords: platinum thin-films;silicon wafer temperature measurement;sputtered thin-films;temperature measurement;thin-film resistors
Research Areas:
PDF version: PDF Document Click here to retrieve PDF version of paper (108KB)