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|Author(s):||David S. Simons; Robert G. Downing; George P. Lamaze; Richard M. Lindstrom; Robert R. Greenberg; Rick L. Paul; Susannah Schiller; William F. Guthrie;|
|Title:||Development of Certified Reference Materials of Ion-Implanted Dopants in Silicon for Calibration of Secondary Ion Mass Spectrometers|
|Published:||January 01, 2007|
|Abstract:||Certified reference materials have been developed for calibration of the concentrations of the most common dopants used in silicon semiconductor technology boron, arsenic, and phosphorus. These materials consist of a single dopant species that is introduced into a silicon wafer by ion implantation. The certified dose (atoms/cm2) of the dopant species is used for calibration of dopant concentration measurements with secondary ion mass spectrometers. Certification measurements were carried out by nuclear analytical methods -- neutron depth profiling for boron, instrumental neutron activation analysis for arsenic, and radiochemical neutron activation analysis for phosphorus. SRM 2137 contains a 10B implant with a certified dose of (1.018 x 1015 0.035 x 1015) atoms/cm2; SRM 2134 contains a 75As implant with a certified dose of (7.330 x 1014 0.028 x 1014) atoms/cm2; SRM 2133 contains a 31P implant with a certified dose of (9.58 x 1014 0.16 x 1014) atoms/cm2. Several examples demonstrate the improved inter-laboratory agreement that is achievable in the measurement of unknown dopant concentrations and implanted doses when these reference materials are used for calibration by each laboratory.|
|Citation:||Journal of Vacuum Science and Technology|
|Pages:||pp. 1365 - 1375|
|Keywords:||arsenic,boron,CRM,ion implantation,neutron activation analysis,phosphorus,silicon,SIMS,SRM|