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Publication Citation: Application of the Hadamard Transform to T0F-SIMS

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Author(s): Albert J. Fahey; Christine M. Mahoney; Jeffrey W. Hudgens;
Title: Application of the Hadamard Transform to T0F-SIMS
Published: Date Unknown
Abstract: An IonOptika [1] C60+ ion source has been fitted onto a CAMECA [1] ims-4f. Stable ion beams of C60+ and C602+ have been obtained with typical currents approaching 20 nA under conditions that allow for several days of source operation. The beam has been able to be focussed into a spot size of ~1 m and scanning ion images acquired. We have performed analyses to characterize the performance of C60+ and C602+. Depth profiles of a Cr-Ni multi-layer and polymer films with C60+ have produced excellent results. We have discovered that under bombardment energies of <12 kV on Si that C60+ will sputter material from the sample but will also produce deposition at a rate that exceeds the sputter rate. The performance of the source and our experiences with its operation will be discussed and some characteristic analysis data will be shown.
Citation: Applied Surface Science
Keywords: Hadamard Transform;SIMS;ToF-SIMS
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