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Publication Citation: Quantitative Measurement of Arsenic Implant Dose by SIMS

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Author(s): David S. Simons; P Chi; K J. Kim;
Title: Quantitative Measurement of Arsenic Implant Dose by SIMS
Published: January 01, 2005
Abstract: Some issues associated with making quantitative measurements of the arsenic implant dose in silicon by SIMS are described. These include the use of a certified reference material for calibration, the choice of silicon matrix reference species, the matrix normalization method, and minimization of detector count losses. A round-robin study is being conducted by ISO TC201/SC6 to determine the best analytical procedures and the level of interlaboratory agreement for this type of measurement.
Citation: Surface and Interface Analysis
Pages: pp. 157 - 160
Keywords: arsenic,depth-profiling,ion implant,round-robin study,silicon,SIMS
Research Areas: