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NIST Authors in Bold
|Author(s):||David S. Simons; P Chi; K J. Kim;|
|Title:||Quantitative Measurement of Arsenic Implant Dose by SIMS|
|Published:||January 01, 2005|
|Abstract:||Some issues associated with making quantitative measurements of the arsenic implant dose in silicon by SIMS are described. These include the use of a certified reference material for calibration, the choice of silicon matrix reference species, the matrix normalization method, and minimization of detector count losses. A round-robin study is being conducted by ISO TC201/SC6 to determine the best analytical procedures and the level of interlaboratory agreement for this type of measurement.|
|Citation:||Surface and Interface Analysis|
|Pages:||pp. 157 - 160|
|Keywords:||arsenic,depth-profiling,ion implant,round-robin study,silicon,SIMS|