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Publication Citation: Mg/GaAs(001): A Highly Anisotropic Reaction Morphology

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Author(s): Steven W. Robey;
Title: Mg/GaAs(001): A Highly Anisotropic Reaction Morphology
Published: December 31, 1999
Abstract: The spontaneous growth of one-dimensional structures during reaction of Mg on GaAs(001) 4x2 Ga-stabilized surface was observed by in situ electron diffraction and ex situ atomic force microscopy (AFM). Reaction led to growth of an epitaxial, cubic phase with a lattice constant of 0.62+/-0.02 nm. Atomic force microscopy revealed structures elongated along [110]. We propose a mechanism for the formation of these features by migration of Ga or Ga-rich droplets that enhance the reaction of Mg with GaAs to form a ridge of Mg3As2 with alignment along [110] due either to strain or chemical anisotropy.
Citation: Applied Physics Letters
Volume: 75
Pages: pp. 1754 - 1756
Keywords: GaAs(001),Mg,reaction vapor-liquid solid,thin films,VLS
Research Areas: