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|Author(s):||F A. Stevie; David S. Simons; J M. McKinley; J McMacken; R Santiesteban; P Flatch; J Becerro;|
|Title:||Dose Calibration of Ion Implanters for Semiconductor Production|
|Published:||February 01, 1998|
|Abstract:||Absolute dose calibration is important for process simulation and transfer of manufacturing to different production line or locations, but until recently, no viable standards were available. With the creation of a NIST standard for boron, it is now possible to determine the absolute dose of a boron implant with a relative uncertainty of less of 5%. The does of boron ion implants were measured by secondary ion mass spectrometry at two different laboratories using similar analysis protocols. The disagreement between the labs was typically less than 2%. The contributions from both B-10 and B-11 were found to be significant.|
|Citation:||Secondary Ion Mass Spectrometry SIMS XI|
|Publisher:||Wiley, Hoboken, NJ|
|Pages:||pp. 1007 - 1010|