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Publication Citation: Dose Calibration of Ion Implanters for Semiconductor Production

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Author(s): F A. Stevie; David S. Simons; J M. McKinley; J McMacken; R Santiesteban; P Flatch; J Becerro;
Title: Dose Calibration of Ion Implanters for Semiconductor Production
Published: February 01, 1998
Abstract: Absolute dose calibration is important for process simulation and transfer of manufacturing to different production line or locations, but until recently, no viable standards were available. With the creation of a NIST standard for boron, it is now possible to determine the absolute dose of a boron implant with a relative uncertainty of less of 5%. The does of boron ion implants were measured by secondary ion mass spectrometry at two different laboratories using similar analysis protocols. The disagreement between the labs was typically less than 2%. The contributions from both B-10 and B-11 were found to be significant.
Citation: Secondary Ion Mass Spectrometry SIMS XI
Publisher: Wiley, Hoboken, NJ
Pages: pp. 1007 - 1010
Keywords: boron,ion implantation,silicon,SIMS
Research Areas: Chemistry