| Author(s): |
F A. Stevie; David S. Simons; J M. McKinley; J McMacken; R Santiesteban; P Flatch; J Becerro; |
| Title: |
Dose Calibration of Ion Implanters for Semiconductor Production |
| Published: |
February 01, 1998 |
| Abstract: |
Absolute dose calibration is important for process simulation and transfer of manufacturing to different production line or locations, but until recently, no viable standards were available. With the creation of a NIST standard for boron, it is now possible to determine the absolute dose of a boron implant with a relative uncertainty of less of 5%. The does of boron ion implants were measured by secondary ion mass spectrometry at two different laboratories using similar analysis protocols. The disagreement between the labs was typically less than 2%. The contributions from both B-10 and B-11 were found to be significant. |
| Citation: |
Secondary Ion Mass Spectrometry SIMS XI |
| Publisher: |
Wiley, Hoboken, NJ |
| Pages: |
pp. 1007 - 1010 |
| Keywords: |
boron;ion implantation;silicon;SIMS |
| Research Areas: |
Chemistry |
