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|Author(s):||Mark A. Sobolewski; James K. Olthoff; Yicheng Wang;|
|Title:||Ion Energy Distributions and Sheath Voltages in Radio-Frequency-Biased, Inductively-Coupled, High-Density Plasma Reactor|
|Published:||April 01, 1999|
|Abstract:||Ion energy distributions were measured at a grounded surface in an inductively-coupled, high-density plasma reactor for pure argon, argon-helium, and argon-xenon discharges at 1.33 Pa (10 mTorr), as a function of radio-frequency (rf) bias amplitude, rf bias frequency, radial position, inductive source power, and ion mass. The ground sheath voltage which accelerates the ions was also determined using capacitive probe measurements and Langmuir probe data. Together, the measurements provide a complete characterization of ion dynamics in the sheath, allowing ion transit time effects to be distinguished from sheath impedance effects. Models are presented which describe both effects and explain why they are observed in the same range of rf bias frequency.|
|Citation:||Journal of Applied Physics|
|Keywords:||discharge,high-density plasma,ion energy,model,plasma,radio frequency,sheath,voltage|