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|Author(s):||K Matsumoto; Y Gotoh; T Maeda; John A. Dagata; J S. Harris;|
|Title:||Metal-based Room-temperature Operating Single Electron Devices Using Scanning Probe Oxidation|
|Published:||January 30, 1998|
|Abstract:||Coulomb oscillation was clearly observed at room temperature in the single electron transistor fabricated by atomic force microscopy (AFM) nano-oxidation process. In order to obtain a clear Coulomb oscillation at room temperature, new and improved fabrication processes and measurement systems such as a pulse-mode AFM nano-oxidation process and a triaxial active feedback measurement system are introduced. The Coulomb oscillation peaks appear with the period of 1.9 V at the drain bias conditions of 0.25 V and 0.3 V. The current modulation rate ranges from 20% to 30%.|
|Citation:||Japanese Journal of Applied Physics|
|Pages:||pp. 477 - 479|
|Keywords:||AFM,Coulomb oscillation,nano-oxidation process,single electron transistor|
|Research Areas:||Manufacturing, Metrology|