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Publication Citation: Metal-based Room-temperature Operating Single Electron Devices Using Scanning Probe Oxidation

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Author(s): K Matsumoto; Y Gotoh; T Maeda; John A. Dagata; J S. Harris;
Title: Metal-based Room-temperature Operating Single Electron Devices Using Scanning Probe Oxidation
Published: January 30, 1998
Abstract: Coulomb oscillation was clearly observed at room temperature in the single electron transistor fabricated by atomic force microscopy (AFM) nano-oxidation process. In order to obtain a clear Coulomb oscillation at room temperature, new and improved fabrication processes and measurement systems such as a pulse-mode AFM nano-oxidation process and a triaxial active feedback measurement system are introduced. The Coulomb oscillation peaks appear with the period of 1.9 V at the drain bias conditions of 0.25 V and 0.3 V. The current modulation rate ranges from 20% to 30%.
Citation: Japanese Journal of Applied Physics
Volume: 38(1,1B)
Pages: pp. 477 - 479
Keywords: AFM;Coulomb oscillation;nano-oxidation process;single electron transistor
Research Areas: Metrology, Manufacturing